參數(shù)資料
型號： KFG1G16D2M-DID6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY(54MHz)
中文描述： 閃存（54MHz之間）
文件頁數(shù)： 65/93頁
文件大?。?/td> 1219K
代理商： KFG1G16D2M-DID6
OneNAND512/OneNAND1GDDP
FLASH MEMORY
65
Error in write or load operation
Within its life time, additional invalid blocks may develop with the device. Refer to the qualification report for the actual data.The fol-
lowing possible failure modes should be considered to implement a highly reliable system. In the case of status read failure after
erase or program, block replacement should be done. Because program status fail during a page program does not affect the data of
the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased empty block and
reprogramming the current target data and copying the rest of the replaced block.
Failure Mode
Detection and Countermeasure sequence
Write
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Load
Single Bit Failure
Error Correction by ECC mode of the device
Block Replacement
When an error happens in the nth page of the Block ’A’ during program operation.
* Step1
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’ via data buffer0.
* Step2
Copy the nth page data of the Block ’A’ in the data buffer1 to the nth page of another free block. (Block ’B’)
Do not further erase or program Block ’A’ but create an ’invalid Block’ table or other appropriate scheme.
Data Buffer1 of the device
(assuming maintain the nth page data)
1st
Block A
Block B
(n-1)th
nth
(page)
{
1st
～
(n-1)th
nth
(page)
{
an error occurs.
1
2
Data Buffer0 of the device
1
Technical Notes
(Continued)
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