參數(shù)資料
型號(hào)： KFG2816D1M-DID
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： OneNAND SPECIFICATION
中文描述： OneNAND的規(guī)格
文件頁數(shù)： 38/87頁
文件大?。?/td> 1175K
代理商： KFG2816D1M-DID
OneNAND128
FLASH MEMORY
38
Write Protection
Write Protection for BootRAM
At system power-up, the voltage detector in the device detects the rising edge of Vcc and releases the internal power-up reset signal
which triggers bootcode loading. And the designated size data(1KB) is copied from the beginning of the memory to the BootRAM.
After the bootcode loading is completed, the BootRAM is always locked to protect the significant boot code from accidental write.
Write Protection for NAND Flash array
Write Protection Modes
The device offers both hardware and software write protection features for NAND Flash array. The software write protection feature is
used by writing Lock command or Lock-tight command to command register; The 002Ah or 002Ch command is written into F220h
register. The partial write protection feature is also permitted by writing Partial Lock(002Ah) and Partial Lock-Tight(002Ch) command
with the start address and the end address to F24Ch and F24Dh registers. The hardware write protection feature is used by executing
cold or warm reset. The default state is locked, and all NAND Flash array goes to locked state after cold or warm reset.
Write Protection Commands
Individual or consecutive instant secured block protects code and data by allowing any block to be locked or lock-tighten. The write
protection scheme offers two levels of protection. The first allows software-only control of write protection(useful for frequently
changed data blocks), while the second requires hardware interaction before locking can be changed(protects infrequently changed
code blocks).
The following summarize the locking functionality.
> All blocks power-up in a locked state. Unlock command can unlock these blocks with the start and end block address.
> Partial Lock-Tight command makes the part of locked block(s) to be lock-tightened by writing the start and end block address. And
lock-tightened state can be returned to lock state only when cold or warm reset is asserted.
> Only one individual area can be lock-tightened by Partial Lock-tight command; i.e lock-tightening multi area is not available.
> Lock-tightened blocks offer the user an additional level of write protection beyond that of a regular locked block. Lock-tightened
block can’t have it’s state changed by software, it can be changed by warm reset or cold reset.
> Unlock start or end block address is reflected immediately to the device only when Unlock command is issued, and NAND Flash
write protection status register is also updated at that time.
> Unlocked blocks can be programmed or erased.
> Only one area can be released from lock state to unlock state with Unlock command and addresses. This unlocked area can be
changed with new Unlock command; when new Unlock command is issued, last unlocked area is locked again and new area is
unlocked.
> Partial Lock command makes the part of unlocked block(s) to be locked with the start and end block address.
> Only one area can be locked with Partial Lock command and address. This locked area can be changed with new Partial Lock com-
mand; when new Partial Lock command is issued, last unlocked area is locked again and new area is unlocked.
Write Protection Status
The block current Write Protection status can be read in NAND Flash Write Protection Status Register(F24Eh). There are three bits -
US, LS, LTS -, which are not cleared by hot reset. These Write Protection status registers are updated when Write Protection com-
mand is entered.
The followings summarize locking status.
example)
In default, [2:0] values are 010.
-> If host executes unlock block operation, then [2:0] values turn to 100.
-> If host executes lock-tight block operation, then [2:0] values turn to 001.
相關(guān)PDF資料
PDF描述
KFG2816D1M-PEB OneNAND SPECIFICATION
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KFG2816D1M-PEB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816D1M-PED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816D1M-PIB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816D1M-PID 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816Q1M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
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