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參數(shù)資料
| 型號(hào)： | KFG2816U1M-PEB |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | OneNAND SPECIFICATION |
| 中文描述： | OneNAND的規(guī)格 |
| 文件頁(yè)數(shù)： | 53/87頁(yè) |
| 文件大小： | 1175K |
| 代理商： | KFG2816U1M-PEB |
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OneNAND128
FLASH MEMORY
53
Figure 22. OTP program operation flow-chart
OTP Programming(OTP Access+Program NAND)
OTP area could be programmed with the same sequence as normal program operation after being accessed by the command. To
avoid the accidental write, FBA should point the unlocked area address among NAND Flash Array address map even though OTP
area is separated from NAND Flash Array.
Start
Data Input
Completed
Write ’OTP Access’ Command
Add: F220h DQ=0065h
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
Write Data into DataRAM
2)
Add: DP DQ=Data-in
OTP Programming completed
Write Program command
DQ=0080h or 001Ah
Automatically
checked
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
NO
Add: F220h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Write 0 to interrupt register
Add: F241h DQ=0000h
OTP Exit
Update Controller
Status Register
Add: F240h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
OTP Exit
Automatically
updated
OTP
L
=0
YES
NO
Read Controller
Status Register
Add: F240h DQ[10]=1(Error)
DQ[14]=1(Lock), DQ[10]=1(Error)
Note 1) FBA(NAND Flash Block Address) could be omitted or any address.
2) Data input could be done anywhere between "Start" and "Write Program Command".
Write ’FBA’ of Flash
Add: F100h DQ=FBA
3)
3) FBA should point the unlocked area address among NAND Flash Array address map.
Write 0 to interrupt register
Add: F241h DQ=0000h
Read Controller
Status Register
Add: F240h DQ[10]=0(Pass)
Do Cold/Warm/Hot
/NAND Flash Core reset
Do Cold/Warm/Hot
/NAND Flash Core reset
Write ’FBA’ of Flash
1)
Add: F100h DQ=FBA
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| KFG2816U1M-PED | OneNAND SPECIFICATION |
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| KFG2816D1M-DEB | OneNAND SPECIFICATION |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFG2816U1M-PED | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2816U1M-PIB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2816U1M-PID | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2G1612M-DEB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFG2G1612M-DED5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
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