參數(shù)資料
型號： KFG2816U1M-PEB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： OneNAND SPECIFICATION
中文描述： OneNAND的規(guī)格
文件頁數(shù)： 69/87頁
文件大?。?/td> 1175K
代理商： KFG2816U1M-PEB
OneNAND128
FLASH MEMORY
69
DC CHARACTERISTICS
1. CE should be VIH for RDY. IOBE should be ’0’ for INT.
2. Icc active for Host access
3. ICC active while Internal operation is in progress.
Parameter
Symbol
Test Conditions
1.8V device
2.65V device
3.3V device
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Input Leakage Current
I
LI
V
IN
=V
SS
to V
CC
, V
CC
=V
CCmax
- 1.0
-
+ 1.0 - 1.0
-
+ 1.0 - 1.0
-
+ 1.0
μ
A
Output Leakage Cur-
rent
I
LO
V
OUT
=V
SS
to V
CC
, V
CC
=V
CCmax
,
CE or OE=V
IH
(Note 1)
- 1.0
-
+ 1.0 - 1.0
-
+ 1.0 - 1.0
-
+ 1.0
μ
A
Active Asynchronous
Read Current (Note 2)
I
CC1
CE=V
IL
, OE=V
IH
-
8
15
-
10
20
-
10
20
mA
Active Burst Read Cur-
rent (Note 2)
I
CC2
CE=V
IL
, OE=V
IH
54MHz
-
12
20
-
20
30
-
20
30
mA
1MHz
-
3
4
-
4
6
-
4
6
mA
Active Write Current
(Note 2)
I
CC3
CE=V
IL
, OE=V
IH
-
8
15
-
10
20
-
10
20
mA
Active Load Current
(Note 3)
I
CC4
CE=V
IL
, OE=V
IH
, WE=V
IH,
V
IN
=V
IH
or
V
IL
-
20
25
-
20
30
-
20
30
mA
Active Program Cur-
rent (Note 3)
I
CC5
CE=V
IL
, OE=V
IH
, WE=V
IH,
V
IN
=V
IH
or
V
IL
-
20
25
-
20
30
-
20
30
mA
Erase/Multi Block
Erase Current (Note 3)
I
CC6
CE=V
IL
, OE=V
IH
, WE=V
IH
,
V
IN
=V
IH
or
V
IL,
64blocks
-
15
20
-
18
25
-
18
25
mA
Standby Current
I
SB
CE= RP=V
CC
±
0.2V
-
10
50
-
15
50
-
15
50
μ
A
Input Low Voltage
V
IL
-
-0.5
-
0.4
-0.5
-
0.4
0
-
0.8
V
Input High Voltage
V
IH
-
V
CCq
-
0.4
-
V
CCq
+0.4
V
CCq
-
0.4
-
V
CCq
+0.4
0.7*V
CCq
-
V
CCq
V
Output Low Voltage
V
OL
I
OL
= 100
μ
A , V
CC
=V
CCmin
,
V
CCq
=V
CCqmin
-
-
0.2
-
-
0.2
-
-
0.22*
Vccq
V
Output High Voltage
V
OH
I
OH
= -100
μ
A , V
CC
=V
CCmin
,
V
CCq
=V
CCqmin
V
CCq
-
0.1
-
-
V
CCq
-
0.4
-
-
0.8*V
CCq
-
-
V
相關PDF資料
PDF描述
KFG2816U1M-PED OneNAND SPECIFICATION
KFG2816U1M-PIB OneNAND SPECIFICATION
KFG2816U1M-PID OneNAND SPECIFICATION
KFG2816D1M-DEB OneNAND SPECIFICATION
KFG2816D1M-DED OneNAND SPECIFICATION
相關代理商/技術參數(shù)
參數(shù)描述
KFG2816U1M-PED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816U1M-PIB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816U1M-PID 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2G1612M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG2G1612M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
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