參數(shù)資料
型號: KFW1G16D2M-DID5
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(54MHz)
中文描述: 閃存(54MHz之間)
文件頁數(shù): 52/125頁
文件大小: 1657K
代理商: KFW1G16D2M-DID5
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
52
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
Burst Length (BL)
BL
Burst Length(Main)
Burst Length(Spare)
000
Continuous(default)
001
4 words
010
8 words
011
16 words
100
32 words
N/A
101~111
Reserved
Burst Length (BL) Information[11:9]
Item
Definition
Description
BL
Burst Length
Specifies the size of the burst length during a synchronous
read, wrap around and linear burst read
Error Correction Code (ECC) Information[8]
Item
Definition
Description
ECC
Error Correction Code Operation
0 = with correction (default)
1 = without correction (bypassed)
RDY Polarity (RDYpol) Information[7]
Item
Definition
Description
RDYpol
RDY signal polarity
1 = high for ready (default)
0 = low for ready
INT Polarity (INTpol) Information[6]
INTpol
INT bit of Interrupt Status Register
INT Pin output
0
0 (busy)
High
1 (ready)
Low
1 (default)
0 (busy)
Low
1 (ready)
High
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFW1G16D2M-DID6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFW1G16Q2M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFW1G16Q2M-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(66MHz)
KFW1G16Q2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFW1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(66MHz)