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參數(shù)資料
| 型號： | KFW1G16D2M-DID5 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY(54MHz) |
| 中文描述： | 閃存（54MHz之間） |
| 文件頁數(shù)： | 64/125頁 |
| 文件大?。?/td> | 1657K |
| 代理商： | KFW1G16D2M-DID5 |
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OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
64
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
This section of the datasheet discusses the operation of the OneNAND device. It is followed by AC/DC
Characteristics and Timing Diagrams which may be consulted for further information.
The OneNAND supports either a command-based or a register-based interface for performing operations on the device including
reading device ID, writing data to buffer etc.
3.1 Command Based Operation
The command-based interface is active in the boot partition. Commands can only be written with a boot area address. Boot area data
is only returned if no command has been issued prior to the read.
The entire address range, except for the boot area, can be used for the data buffer. All commands are written to the boot partition.
Writes outside the boot partition are treated as normal writes to the buffers or registers.
The command consists of one or more cycles depending on the command. After completion of the command the device starts its exe-
cution. Writing incorrect information including address and data to the boot partition or writing an improper command will terminate
the previous command sequence and make the device enter the ready status.
The defined valid command based sequences are stated in Command Sequences Table.
Command Sequences
NOTE:
1) DP(Data Partition) : DataRAM Area
2) BP(Boot Partition) : BootRAM Area [0000h ~ 01FFh, 8000h ~ 800Fh].
3) Load Data into Buffer operation is available within a block(128KB)
4) Load 2KB unit into DataRAM0. Current Start address(FPA) is automatically incremented by 2KB unit after the load.
5) 0000h -> Data is Manufacturer ID
0001h -> Data is Device ID
0002h -> Current Block Write Protection Status
6) WE toggling can terminate ’Read Identification Data’ operation.
Command Definition
Cycles
1st cycle
2nd cycle
Read Data from Buffer
Add
1
DP
1)
Data
Data
Write Data to Buffer
Add
1
DP
Data
Data
Reset OneNAND
Add
1
BP
2)
Data
00F0h
Load Data into Buffer
3)
Add
2
BP
BP
Data
00E0h
0000h
4)
Read Identification Data
6)
Add
2
BP
XXXXh
5)
Data
0090h
Data
3.0 DEVICE OPERATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KFW1G16D2M-DID6 | FLASH MEMORY(54MHz) |
| KFW1G16Q2M-DEB5 | FLASH MEMORY(54MHz) |
| KFG1G16U2M-DEB | FLASH MEMORY |
| KFH1G16U2M-DEB | FLASH MEMORY |
| KFG1G16Q2M-DEB6 | FLASH MEMORY(66MHz) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFW1G16D2M-DID6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFW1G16Q2M-DEB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFW1G16Q2M-DEB6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(66MHz) |
| KFW1G16Q2M-DED5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFW1G16Q2M-DED6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(66MHz) |
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