參數(shù)資料
型號(hào): KFW4G16Q2M-DED6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(66MHz)
中文描述: 閃存(66MHz的)
文件頁數(shù): 60/125頁
文件大小: 1632K
代理商: KFW4G16Q2M-DED6
OneNAND1G(KFG1G16Q2M-DEB6)
FLASH MEMORY
60
OneNAND2G(KFH2G16Q2M-DEB6)
OneNAND4G(KFW4G16Q2M-DEB6)
2.8.25 NAND Flash Write Protection Status Register F24Eh (R)
This Read register shows the Write Protection Status of the NAND Flash memory array.
To read the write protection status, FBA has to be set before reading the register
.
F24Eh, default = 0002h
Write Protection Status Information[2:0]
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000000000000)
US
LS
LTS
Item
Bit
Definition
Description
US
2
Unlocked Status
1 = current NAND Flash block is unlocked
LS
1
Locked Status
1 = current NAND Flash block is locked
LTS
0
Locked-Tight Status
1 = current NAND Flash block is locked-tight
This register is reserved for future use.
2.8.26 ECC Status Register FF00h (R)
This Read register shows the Error Correction Status. The OneNAND can detect 1- or 2-bit errors and correct 1-bit errors. 3-bit or
more error detection and correction is not supported.
ECC can be performed on the NAND Flash main and spare memory areas. The ECC status register can also show the number of
errors in a sector as a result of an ECC check in during a load operation. ECC status bits are also updated during a boot loading oper-
ation.
FF00h, default = 0000h
Error Status
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
ERm3
ERs3
ERm2
ERs2
ERm1
ERs1
ERm0
ERs0
ERm, ERs
ECC Status
00
No Error
01
1-bit error(correctable)
10
2 bits error (uncorrectable)
11
Reserved
2.8.24 End Block Address Register F24Dh
相關(guān)PDF資料
PDF描述
KFW4G16Q2M FLASH MEMORY(66MHz)
KFG1G16Q2M-DEB FLASH MEMORY
KFG1G16Q2M-DED FLASH MEMORY
KFG1G16Q2M-DIB FLASH MEMORY
KFG1G16Q2M-DID FLASH MEMORY
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