參數(shù)資料
型號(hào)： KM432D5131
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128K x 32Bit x 4 Banks Double Data Rate Synchronous Graphic RAM with Bi-directional Data Strobe(128K x 32位 x 4 組雙速率同步圖形RAM帶雙向數(shù)據(jù)選通)
中文描述： 128K的x 32Bit的× 4銀行雙數(shù)據(jù)速率同步圖形RAM的雙向數(shù)據(jù)選通（128K的× 32位× 4組雙速率同步圖形RAM的帶雙向數(shù)據(jù)選通）
文件頁(yè)數(shù)： 12/47頁(yè)
文件大?。?/td> 912K
代理商： KM432D5131
Target
16M DDR SGRAM
- 13 -
KM432D5131
Rev. 0.6 (Apr. 1998)
A Burst Read can be interrupted before completion of the burst by new Read command of any bank. When the previous
burst is interrupted, the remaining addresses are overridden by the new address with the full burst length. The data from
the first Read command continues to appear on the outputs until the CAS latency from the interrupting Read command is
satisfied. At this point the data from the interrupting Read command appears. Read to Read interval is minimum 1 tck.
á
BURST INTERRUPTION
Read Interrupted by a Read
To interrupt a burst read with a write command, Burst stop command must be asserted to avoid data contention on the I/
O bus by placing the DQ
′
s
(Output drivers) in a high impedance state at least one clock cycle before the Write Command is
initiated.
Read Interrupted by Burst stop & a Write
Command
< Burst Length=4, CAS Latency=2 >
READ A
READ B
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQ
′
s
CAS Latency=2
Dout A
0
Dout A
1
Dout B
0
Dout B
1
Dout B
2
Dout B
3
Command
< Burst Length=4, CAS Latency=2 >
READ
Burst Stop
NOP
WRITE
NOP
NOP
NOP
NOP
DQS
DQ
′
s
CAS Latency=2
Dout 0
Dout 1
Din 0
Din 1
Din 2
Din 3
CK, CK
CK, CK
2
0
1
5
3
4
8
6
7
2
0
1
5
3
4
8
6
7
NOP
相關(guān)PDF資料
PDF描述
KM432S2020B 1M x 32Bit x 2 Banks Synchronous DRAM(1M x 32位 x 2 組同步動(dòng)態(tài)RAM)
KM432S2030C 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
KM432S2030CT-F6 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
KM432S2030CT-F7 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
KM432S2030CT-F8 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM432D5131TQ-G8 制造商:Samsung Semiconductor 功能描述:
KM432J 制造商:未知廠家 制造商全稱:未知廠家 功能描述:R. F. Molded Chokes
KM432S2030C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
KM432S2030CT-F10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
KM432S2030CT-F6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
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