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參數(shù)資料
| 型號： | KM432D5131 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 32Bit x 4 Banks Double Data Rate Synchronous Graphic RAM with Bi-directional Data Strobe(128K x 32位 x 4 組雙速率同步圖形RAM帶雙向數(shù)據(jù)選通) |
| 中文描述： | 128K的x 32Bit的× 4銀行雙數(shù)據(jù)速率同步圖形RAM的雙向數(shù)據(jù)選通（128K的× 32位× 4組雙速率同步圖形RAM的帶雙向數(shù)據(jù)選通） |
| 文件頁數(shù)： | 16/47頁 |
| 文件大?。?/td> | 912K |
| 代理商： | KM432D5131 |
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Target
16M DDR SGRAM
- 17 -
KM432D5131
Rev. 0.6 (Apr. 1998)
The Auto precharge command can be issued by having column address A
asserted into the DDR SGRAM. If A
8
is low when Read or Write command is issued, then normal Read or Write burst oper-
ation is asserted and the bank remains active after the completion of the burst sequence. When the Auto precharge com-
mand is activated, the active bank automatically begins to precharge at the earliest possible moment during read or write
cycle after t
RAS
(min) is satisfied.
8
High when a Read or a Write command is
á
AUTO-PRECHARGE OPERATION
Command
< Burst Length=4, CAS Latency=2, 3 >
BANK A
ACTIVE
NOP
READ A
Auto Precharge
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQ
′
s
CAS Latency=2
Dout 0 Dout 1 Dout 2 Dout 3
If a Read with Auto-precharge command is initiated, the DDR SGRAM automatically starts the precharge operation on
BL/2 clock later from a Read with Auto-Precharge command when
t
RAS
(min) is satisfied. If not, the start point of precharge
operation will be delayed until
t
RAS
(min) is satisfied. Once the precharge operation has started the bank cannot be reacti-
vated and the new command can not be asserted until the Precharge time(
t
RP
) has been satisfied.
Read with Auto Precharge
* completion of
precharge
t
RP
Begin Auto-Precharge
DQS
DQ
′
s
CAS Latency=3
Dout 0 Dout 1 Dout 2 Dout 3
When the Read with Auto precharge command is issued, new command can be asserted at T3,T4 and T5 respectively
as follows,
Asserted
command
For same Bank
For Different Bank
3
4
5
3
4
5
Read Interrupt
READ +
NO AP*1
READ+
NO AP
Illegal
Legal
Legal
Legal
Active
Illegal
Illegal
Fail
Legal
Legal
Legal
Precharge
Illegal
Illegal
Fail
Legal
Legal
Legal
*1 : AP = Auto Precharge
CK, CK
2
0
1
5
3
4
8
6
7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM432D5131TQ-G8 | 制造商:Samsung Semiconductor 功能描述: |
| KM432J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:R. F. Molded Chokes |
| KM432S2030C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
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