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參數(shù)資料
| 型號(hào)： | KM44C4105C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out(4M x 4位 CMOS 四CAS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| 中文描述： | 4米× 4位的CMOS DRAM與中科院四擴(kuò)展數(shù)據(jù)輸出（4米× 4位的CMOS四中科院動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶擴(kuò)展數(shù)據(jù)輸出）） |
| 文件頁數(shù)： | 4/20頁 |
| 文件大小： | 363K |
| 代理商： | KM44C4105C |
CMOS DRAM
KM44C4005C, KM44C4105C
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one Hyper page mode cycle time, t
HPC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and CAS cycling @t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS cycling @t
RC
=min.)
I
CC4
* : Hyper Page Mode Current (RAS=V
IL
, CAS, Address cycling @t
HPC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @t
RC
=min.)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, CAS=0.2V,
DQ=Don
′
t care, T
RC
=31.25us(4K/L-ver), 62.5us(2K/L-ver), T
RAS
=T
RAS
min~300ns
I
CCS
: Self Refresh Current
RAS=CAS=0.2V, W=OE=A0 ~ A11=V
CC
-0.2V or 0.2V,
DQ0 ~ DQ3=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM44C4005C
KM44C4105C
I
CC1
Don
′
t care
-5
-6
90
80
110
100
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
uA
uA
I
CC2
Normal
L
Don
′
t care
2
1
2
1
I
CC3
Don
′
t care
-5
-6
90
80
110
100
I
CC4
Don
′
t care
-5
-6
80
70
90
80
I
CC5
Normal
L
Don
′
t care
1
250
1
250
I
CC6
Don
′
t care
-5
-6
90
80
110
100
I
CC7
I
CCS
L
L
Don
′
t care
Don
′
t care
300
250
300
250
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM44C4103C | 4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode(4M x 4位CMOS四CAS 動(dòng)態(tài)RAM(帶快速頁模式)) |
| KM44C4003C | 4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode(4M x 4位CMOS四CAS 動(dòng)態(tài)RAM(帶快速頁模式)) |
| KM44C4104C | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out(4M x 4位 CMOS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| KM44C4004C | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out(4M x 4位 CMOS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| KM44V4004C | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out(4M x 4位 CMOS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44L16031BT-GFZ/Y/0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Specification Version 0.61 |
| KM44L32031BT-G(F)0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Specification Version 0.61 |
| KM44L32031BT-G(F)Y | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Specification Version 0.61 |
| KM44L32031BT-G(F)Z | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Specification Version 0.61 |
| KM44L32031BT-G(L)0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Specification Version 1.0 |
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