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參數(shù)資料
| 型號(hào)： | KM616S2000 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(128K x 16位低功耗低電壓CMOS 靜態(tài)RAM) |
| 中文描述： | 128K的x16位低功耗和低電壓的CMOS全靜態(tài)RAM（128K的× 16位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | KM616S2000 |
CMOS SRAM
Preliminary
KM616S2000 Family
Revision 0.0
October 1997
128K x16 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The KM616S2000 families are fabricated by SAMSUNG
′
s
advanced CMOS process technology. The families support
various operating temperature ranges and wide voltage
operation for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
FEATURES
Process Technology : TFT
Organization :128Kx16
Power Supply Voltage
KM616S2000 Family : 2.3~3.3V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 44-TSOP2 -400F
PIN DESCRIPTION
Name
Function
Name
Function
CS
Chip Select Input
I/O
1
~I/O
16
Data Inputs/Outputs
OE
Output Enable Input
A
0
~A
16
Address Inputs
WE
Write Enable Input
Vcc
Power
UB
Upper Block Select Input
Vss
Ground
LB
Lower Block Select Input
N.C
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Produc Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
,Max)
KM616S2000L-L
Commercial
(0~70
°
C)
2.3~2.7V
120
1)
/150ns
10
μ
A
45mA
44-TSOP2-F
2.7~3.3V
55mA
KM616S2000LI-L
Industrial
(-40~85
°
C)
2.3~2.7V
15
μ
A
45mA
2.7~3.3V
55mA
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A16
A15
A14
A13
A12
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
N.C
44-TSOP2
Forward
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Precharge circuit.
Memory array
1024 rows
128
×
16 columns
I/O Circuit
Column select
Clk gen.
Row
select
A9 A10 A11 A12 A13 A14A15
A0
A1
A2
A3
A4
A5
A6
A7
CS
OE
UB
WE
I/O
1
~I/O
8
A8
Data
cont
Data
cont
Data
cont
LB
I/O
9
~I/O
16
Vcc
Vss
A16
Control
logic
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM616S4000C | 256Kx16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616U1000B | 64K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(64K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM616V1000B | 64K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(64K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM616U2000 | 128K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(128K x 16位低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616U4000BZ | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM6-16S-3PN | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-3PN-MK2 | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-3SN | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-3SN-MK2 | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM616V1000BLTI-7L | 制造商:Samsung Semiconductor 功能描述: |
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