參數(shù)資料
型號(hào): KM616S2000
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(128K x 16位低功耗低電壓CMOS 靜態(tài)RAM)
中文描述: 128K的x16位低功耗和低電壓的CMOS全靜態(tài)RAM(128K的× 16位低功耗低電壓的CMOS靜態(tài)RAM)的
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 117K
代理商: KM616S2000
CMOS SRAM
Preliminary
KM616S2000 Family
Revision 0.0
October 1997
PRODUCT LIST
Note : LL - Low Low Standby Current
Commercial Temperature Product(0~70
°
C)
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
Part Name
Function
KM616S2000LT-12L
KM616S2000LT-15L
44-TSOP2, 120ns, 2.3~3.3V, LL
44-TSOP2, 150ns, 2.3~3.3V, LL
KM616S2000LTI-12L
KM616S2000LTI-15L
44-TSOP2, 120ns, 2.3~3.3V, LL
44-TSOP2, 150ns, 2.3~3.3V, LL
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.5 to V
CC
+0.5
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.3 to 4.6
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
°
C
°
C
°
C
-
Operating Temperature
T
A
0 to 70
KM616S2000L
-40 to 85
KM616S2000LI
Soldering temperature and time
T
SOLDER
260
°
C, 10sec (Lead Only)
-
-
FUNCTIONAL DESCRIPTION
1. X means don
t care. (Must be in low or high state)
CS
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
L
H
H
X
1)
X
1)
High-Z
High-Z
Output Disabled
Active
L
X
1)
X
1)
H
H
High-Z
High-Z
Output Disabled
Active
L
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
L
H
L
L
Dout
Dout
Word Read
Active
L
X
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
X
1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
X
1)
L
L
L
Din
Din
Word Write
Active
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