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參數(shù)資料
| 型號： | KM616S2000 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(128K x 16位低功耗低電壓CMOS 靜態(tài)RAM) |
| 中文描述： | 128K的x16位低功耗和低電壓的CMOS全靜態(tài)RAM（128K的× 16位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 117K |
| 代理商： | KM616S2000 |
CMOS SRAM
Preliminary
KM616S2000 Family
Revision 0.0
October 1997
AC CHARACTERISTICS
(Vcc=2.3~3.3V, KM616S2000 Family : T
A
=0 to 70
°
C, KM616S2000I Family : T
A
=-40 to 85
°
C)
1. The parameter is measured with 30pF test load.
Parameter List
Symbol
Speed Bins
Units
120
1)
ns
150ns
Min
Max
Min
Max
Read
Read cycle time
t
RC
120
-
150
-
ns
Address access time
t
AA
-
120
-
150
ns
Chip select to output
t
CO
-
120
-
150
ns
Output enable to valid output
t
OE
-
60
-
75
ns
Byte enable to valid output
t
BA
-
60
-
75
ns
Chip select to low-Z output
t
LZ
20
-
20
-
ns
Output enable to low-Z output
t
OLZ
10
-
10
-
ns
UB, LB enable to low-Z output
t
BLZ
10
-
10
-
ns
Output hold from address change
t
OH
15
-
15
-
ns
Chip disable to high-Z output
t
HZ
-
35
0
40
ns
Output disable to high-Z output
t
OHZ
-
35
0
40
ns
UB, LB disable to high-Z output
t
BHZ
-
35
0
40
ns
Write
Write cycle time
t
WC
120
-
150
-
ns
Chip select to end of write
t
CW
100
-
120
-
ns
Address set-up time
t
AS
0
-
0
-
ns
Address valid to end of write
t
AW
100
-
120
-
ns
UB, LB valid to end of write
t
BW
100
-
120
-
ns
Write pulse width
t
WP
80
-
100
-
ns
Write recovery time
t
WR
0
-
0
-
ns
Write to output high-Z
t
WHZ
0
30
0
40
ns
Data to write time overlap
t
DW
50
-
60
-
ns
Data hold from write time
t
DH
0
-
0
-
ns
End write to output low-Z
t
OW
5
-
5
-
ns
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Min
Typ
Max
Unit
Vcc for data retention
V
DR
CS
≥
Vcc-0.2V
Vcc=2.0V, CS
≥
Vcc-0.2V
2.0
-
3.3
V
Data retention current
I
DR
-
-
10
μ
A
Data retention set-up time
t
SDR
See data retention waveform
0
-
-
ms
Recovery time
t
RDR
5
-
-
C
L
1
)
1. Including scope and jig capacitance
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level : 0.4 to 2.2V
Input rising and falling time : 5ns
Input and output reference voltage : 1.5V
Output load (See right) :C
L
=100pF+1TTL
C
L
1)
=30pF+1TTL
1. Refer to AC CHARACTERISTICS
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|---|---|
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| KM6-16S-3SN | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-3SN-MK2 | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM616V1000BLTI-7L | 制造商:Samsung Semiconductor 功能描述: |
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