- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373158 > KM616U2000 (SAMSUNG SEMICONDUCTOR CO. LTD.) 128K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(128K x 16位低功耗低電壓CMOS 靜態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | KM616U2000 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(128K x 16位低功耗低電壓CMOS 靜態(tài)RAM) |
| 中文描述： | 128K的x16位低功耗和低電壓的CMOS全靜態(tài)RAM（128K的× 16位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 114K |
| 代理商： | KM616U2000 |
CMOS SRAM
Preliminary
KM616U2000 Family
Revision 0.1
December 1997
128K x16 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The KM616U2000 families are fabricated by SAMSUNG
′
s
advanced CMOS process technology. The families support
various operating temperature ranges and small package for
user flexibility of system design. The families also support low
data retention voltage for battery back-up operation with low
data retention current.
FEATURES
Process Technology : TFT
Organization :128Kx16
Power Supply Voltage : 2.7~3.3V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 44-TSOP2 -400F
PIN DESCRIPTION
Name
Function
Name
Function
CS
Chip Select Input
I/O
1
~I/O
16
Data Inputs/Outputs
OE
Output Enable Input
A
0
~A
16
Address Inputs
WE
Write Enable Input
Vcc
Power
UB
Upper Block Select Input
Vss
Ground
LB
Lower Block Select Input
N.C
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed (ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
KM616U2000L-L
Commercial(0~70
°
C)
Industrial(-40~85
°
C)
2.7~3.3V
85
1)
/100ns
10
μ
A
15
μ
A
55mA
44-TSOP2-F
KM616U2000LI-L
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
A4
A3
A2
A1
A0
CS
I/O1
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A16
A15
A14
A13
A12
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
N.C
44-TSOP2
Forward
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Precharge circuit.
Memory array
1024 rows
128
×
16 columns
I/O Circuit
Column select
Clk gen.
Row
select
A9 A10 A11 A12 A13 A14A15
A0
A1
A2
A3
A4
A5
A6
A7
CS
I/O
1
~I/O
8
A8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
A16
WE
OE
UB
LB
Control
logic
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM616U4000BZ | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM616V4000BZ | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM616U4000B | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM616V4000B | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM616U4000C | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM616V1000BLTI-7L | 制造商:Samsung Semiconductor 功能描述: |
| KM616V1002AT-12 | 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP 制造商:SEC 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP |
| KM616V1002AT-15 | 制造商:SEC 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP |
| KM616V1002BT-10 | 制造商:SEC 功能描述: |
| KM616V4002BT15 | 制造商:SAMSUNG 功能描述:* |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。