參數(shù)資料
型號: KM616U2000
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(128K x 16位低功耗低電壓CMOS 靜態(tài)RAM)
中文描述: 128K的x16位低功耗和低電壓的CMOS全靜態(tài)RAM(128K的× 16位低功耗低電壓的CMOS靜態(tài)RAM)的
文件頁數(shù): 3/9頁
文件大小: 114K
代理商: KM616U2000
CMOS SRAM
Preliminary
KM616U2000 Family
Revision 0.1
December 1997
PRODUCT LIST
Note : LL - Low Low Standby Current
Commercial Temperature Products(0~70
°
C)
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
Part Name
Function
KM616U2000LT-8L
KM616U2000LT-10L
44-TSOP2, 85ns, 3.0V, LL
44-TSOP2, 100ns, 3.0V, LL
KM616U2000LTI-8L
KM616U2000LTI-10L
44-TSOP2, 85ns, 3.0V, LL
44-TSOP2, 100ns, 3.0V, LL
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.5 to V
CC
+0.5
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.3 to 4.6
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
°
C
°
C
°
C
-
Operating Temperature
T
A
0 to 70
KM616U2000L
-40 to 85
KM616U2000LI
Soldering temperature and time
T
SOLDER
260
°
C, 10sec (Lead Only)
-
-
FUNCTIONAL DESCRIPTION
1. X means don
t care. (Must be in low or high state)
CS
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
L
H
H
X
1)
X
1)
High-Z
High-Z
Output Disabled
Active
L
X
1)
X
1)
H
H
High-Z
High-Z
Output Disabled
Active
L
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
L
H
L
L
Dout
Dout
Word Read
Active
L
X
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
X
1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
X
1)
L
L
L
Din
Din
Word Write
Active
相關(guān)PDF資料
PDF描述
KM616U4000BZ 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616V4000BZ 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616U4000B 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616V4000B 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616U4000C 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM616V1000BLTI-7L 制造商:Samsung Semiconductor 功能描述:
KM616V1002AT-12 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP 制造商:SEC 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP
KM616V1002AT-15 制造商:SEC 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP
KM616V1002BT-10 制造商:SEC 功能描述:
KM616V4002BT15 制造商:SAMSUNG 功能描述:*