參數(shù)資料
型號(hào)： KMM466S823BT2
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 8Mx64 SDRAM SODIMM(8M x 64 動(dòng)態(tài) RAM模塊)
中文描述： 8Mx64 SDRAM內(nèi)存的SODIMM（8米× 64動(dòng)態(tài)內(nèi)存模塊）
文件頁(yè)數(shù)： 6/13頁(yè)
文件大?。?/td> 123K
代理商： KMM466S823BT2
144pin SDRAM SODIMM
KMM466S823BT2
REV. 6 June '98
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-0
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
OL
= 0 mA
720
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
8
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
8
Precharge standby current in
non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
160
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
80
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
16
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
16
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
240
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
160
mA
Operating current
(Burst mode)
I
CC4
I
OL
= 0 mA
Page burst
2Banks activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
3
840
mA
1
2
720
Refresh current
I
CC5
1,080
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
3.6
mA
1. Measured with outputs open.
2. Refresh period is 64ms.
Notes :
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