參數(shù)資料
型號(hào)： KMM53216004BKG
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
中文描述： 1,600 × 32的DRAM上海藥物研究所利用16Mx4，4K的刷新，5V的
文件頁(yè)數(shù)： 5/21頁(yè)
文件大?。?/td> 445K
代理商： KMM53216004BKG
DRAM MODULE
KMM53216004CK/CKG
* NOTE
: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70
°
C)
Item
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
d
I
OS
Rating
-1 to +7.0
-1 to +7.0
-55 to +125
8
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
*1 : V
CC
+2.0V at pulse width
≤
20ns, which is measured at V
CC
.
*2 : -2.0V at pulse width
≤
20ns, which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Item
Symbol
Min
4.5
0
2.4
-1.0
*2
Typ
Max
5.5
0
V
CC
*1
0.8
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
V
CC
V
SS
V
IH
V
IL
5.0
0
-
-
V
V
V
V
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I(
IL)
I(
OL)
V
OH
V
OL
Symbol
Speed
KMM53216004CK/CKG
Unit
Min
Max
960
880
16
960
880
880
800
8
960
880
10
5
-
0.4
I
CC1
-5
-6
-
-
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
I
CC2
Don
′
t care
-5
-6
-5
-6
Don
′
t care
-5
-6
-
-
-
-
-
-
-
-
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Don
′
t care
-10
-5
2.4
-
Don
′
t care
: Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
: Standby Current (RAS=CAS=W=V
IH
)
: RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
: Hyper Page Mode Current * (RAS=V
IL
, CAS cycling :
t
HPC
=min)
: Standby Current (RAS=CAS=W=Vcc-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
: Input Leakage Current (Any input 0
≤
V
IN
≤
Vcc+0.5V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤
V
OUT
≤
Vcc)
: Output High Voltage Level (I
OH
= -5mA)
: Output Low Voltage Level (I
OL
= 4.2mA)
相關(guān)PDF資料
PDF描述
KMM53216004CKG 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
KMM5322104CKU 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
KMM5322104CKUG 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
KMM5322200C2W 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM53216004CK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
KMM53216004CKG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
KMM5322104CKU 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
KMM5322104CKUG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
KMM5322200C2W 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
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