參數(shù)資料
型號： KMM5322200C2W
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
中文描述： 200萬× 32的DRAM上海藥物研究所使用1Mx16，每1000刷新，5V的
文件頁數(shù)： 5/17頁
文件大?。?/td> 280K
代理商： KMM5322200C2W
DRAM MODULE
KMM5322200C2W/C2WG
Rev. 0.0 (Nov. 1997)
- 5 -
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one page mode cycle,
t
PC
.
* NOTE
:
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for in
periods may affect device reliability.
tended
Item
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
d
I
OS
Rating
-1 to +7.0
-1 to +7.0
-55 to +150
4
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70
°
C)
*1 : V
CC
+2.0V/20ns, Pulse width is measured at V
CC
.
*2 : -2.0V/20ns, Pulse width is measured at V
SS
.
Item
Symbol
Min
4.5
0
2.4
-1.0
*2
Typ
Max
5.5
0
V
CC
+1
*1
0.8
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
V
CC
V
SS
V
IH
V
IL
5.0
0
-
-
V
V
V
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Symbol
Speed
KMM5322200C2W/C2WG
Unit
Min
Max
304
284
8
304
284
184
164
4
304
284
20
10
-
0.4
I
CC1
-5
-6
-
-
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
I
CC2
I
CC3
Don
′
t care
-5
-6
-5
-6
Don
′
t care
-5
-6
-
-
-
-
-
-
-
-
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Don
′
t care
-20
-10
2.4
-
Don
′
t care
: Operating Current * ( RAS, LCAS or UCAS, Address cycling @
t
RC
=min)
: Standby Current ( RAS=LCAS=UCAS=W=V
IH
)
: RAS Only Refresh Current * ( LCAS=UCAS=V
IH
, RAS cycling @
t
RC
=min)
: Fast Page Mode Current * ( RAS=V
IL
, LCAS or UCAS cycling :
t
PC
=min)
: Standby Current ( RAS=LCAS=UCAS=W=Vcc-0.2V)
: CAS-Before-RAS Refresh Current * ( RAS and CAS cycling @
t
RC
=min)
: Input Leakage Current (Any input 0
≤
V
IN
≤
Vcc+0.5V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤
V
OUT
≤
Vcc)
: Output High Voltage Level (I
OH
= -5mA)
: Output Low Voltage Level (I
OL
= 4.2mA)
相關(guān)PDF資料
PDF描述
KMM5322200C2WG 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
KMM5322204C2W 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V
KMM5322204C2WG 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V
KMM53232000BK 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
KMM53232000CK 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM5322200C2WG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
KMM5322204C2W 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V
KMM5322204C2WG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V
KMM532256CV-08 制造商:Samsung Semiconductor 功能描述:
KMM53232000BK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*