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參數(shù)資料
| 型號： | KMM5322200C2W |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V |
| 中文描述： | 200萬× 32的DRAM上海藥物研究所使用1Mx16，每1000刷新，5V的 |
| 文件頁數(shù)： | 7/17頁 |
| 文件大小： | 280K |
| 代理商： | KMM5322200C2W |
DRAM MODULE
KMM5322200C2W/C2WG
Rev. 0.0 (Nov. 1997)
- 7 -
NOTES
An initial pause of 200us is required after power-up followed
by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
V
IH
(min) and V
IL
(max) are reference levels for measuring
timing of input signals. Transition times are measured
between V
IH
(min) and V
IL
(max) and are assumed to be 5ns
for all inputs.
Measured with a load equivalent to 2 TTL loads and 100pF.
Operation within the
t
RCD
(max) limit insures that
t
RAC
(max)
can be met.
t
RCD
(max) is specified as a reference point only.
If
t
RCD
is greater than the specified
t
RCD
(max) limit, then
access time is controlled exclusively by
t
CAC
.
Assumes that
t
RCD
≥
t
RCD
(max).
This parameter defines the time at which the output achieves
the open circuit condition and is not referenced to V
OH
or
V
OL
.
t
WCS
is non-restrictive operating parameter. It is included in
the data sheet as electrical characteristic s only. If
t
WCS
≥
t
WCS
(min), the cycle is an early write cycle and the
data out pin will remain high impedance for the duration of
the cycle.
Either
t
RCH
or
t
RRH
must be satisfied for a read cycle.
These parameter are referenced to the CAS leading edge in
early write cycles.
Operation within the
t
RAD
(max) limit insures that
t
RAC
(max)
can be met.
t
RAD
(max) is specified as reference point only. If
t
RAD
is greater than the specified
t
RAD
(max) limit, then
access time is controlled by
t
AA
.
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
Test condition : V
ih
/V
il
=2.4/0.8V, V
oh
/V
ol
=2.4/0.4V, Output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
35
10
50
10
10
Max
Min
40
10
60
10
10
Max
Fast page mode cycle time
CAS precharge time(Fast page cycle)
RAS pulse width(Fast page cycle)
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
t
PC
t
CP
t
RASP
t
WRP
t
WRH
ns
ns
ns
ns
ns
200K
200K
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, V
CC
=5.0V
±
10%. See notes 1,2.)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| KMM5322200C2WG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V |
| KMM5322204C2W | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V |
| KMM5322204C2WG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V |
| KMM532256CV-08 | 制造商:Samsung Semiconductor 功能描述: |
| KMM53232000BK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
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