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參數(shù)資料
| 型號(hào)： | KMM5361205C2WG |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
| 中文描述： | 100萬× 36的DRAM上海藥物研究所和4M使用1Mx16四中科院江戶，一千刷新 |
| 文件頁數(shù)： | 6/17頁 |
| 文件大?。?/td> | 289K |
| 代理商： | KMM5361205C2WG |
DRAM MODULE
KMM5361205C2W/C2WG
Rev. 0.0 (Nov. 1997)
- 6 -
CAPACITANCE
(T
A
= 25
°
C, V
CC
=5V, f = 1MHz)
Item
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ1
Min
Max
30
40
30
25
20
Unit
pF
pF
pF
pF
pF
Input capacitance[A0-A9]
Input capacitance[W]
Input capacitance[RAS0]
Input capacitance[CAS0 - CAS3]
Input/Output capacitance[DQ0-35]
-
-
-
-
-
Test condition : V
ih
/V
il
=2.4/0.8V, V
oh
/V
ol
=2.0/0.8V, Output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
90
Max
Min
110
Max
Random read or write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay from CAS
Transition time(rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in set-up time
Data-in hold time
Refresh period
Write command set-up time
CAS setup time(CAS-before-RAS refresh)
CAS hold time(CAS-before-RAS refresh)
RAS precharge to CAS hold time
Access time from CAS precharge
t
RC
t
RAC
t
CAC
t
AA
t
CLZ
t
CEZ
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
REF
t
WCS
t
CSR
t
CHR
t
RPC
t
CPA
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
50
15
25
60
17
30
3,4,10
3,4,5
3,10
3
6,11,12
2
3
3
2
3
3
2
13
50
15
50
30
50
13
40
8
20
15
5
0
10
0
8
25
0
0
0
10
10
13
13
0
8
40
60
17
50
10
20
15
5
0
10
0
10
30
0
0
0
10
10
15
10
0
10
10K
10K
10K
37
25
10K
45
30
13
4
10
8
8
9
9
16
16
0
5
0
5
7
10
5
10
5
30
35
3
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, V
CC
=5.0V
±
10%. See notes 1,2.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KMM53632000BK | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53632000CK | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53632000BKG | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53632000CKG | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53632004BK | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KMM53616000BK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53616000BKG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53616000CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53616000CKG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53616004BK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
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