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參數(shù)資料
| 型號(hào)： | KMM965G256B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx64 SGRAM SODIMM(256Kx64 圖形RAM模塊) |
| 中文描述： | 256Kx64 SGRAM個(gè)SODIMM（256Kx64圖形內(nèi)存模塊） |
| 文件頁數(shù)： | 6/15頁 |
| 文件大?。?/td> | 129K |
| 代理商： | KMM965G256B |
SGRAM MODULE
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
KMM965G256BQ(P)N / KMM966G256BQ(P)N
- 7 -
Rev. 2.5 (Jul. 1998)
A
= 0 to 70
°
C V
IH(min)
/V
IL(max)
=2.0V/0.8V)
Parameter
Symbol
Test Condition
CAS
Latency
Speed
Unit
Note
-7
-8
-10
Operating Current
(One Bank Active)
I
CC1
Burst Length =1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0 mA
360
320
300
mA
1
Precharge Standby Current
in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
4
mA
I
CC2
PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
4
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
70
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
30
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
6
mA
I
CC3
PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
6
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
100
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
50
Operating Current
(Burst Mode)
I
CC4
I
OL
= 0 mA, Page Burst
All bank Activated, t
CCD
= t
CCD
(min)
3
600
560
420
mA
1
2
360
360
320
Refresh Current
I
CC5
t
RC
≥
t
RC
(min)
180
180
180
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
4
mA
Operating Current
(One Bank Block Write)
I
CC7
t
CC
≥
t
CC
(min), I
OL
=0mA, t
BWC
(min)
420
380
300
mA
Note :
1. Measured with outputs open. Address are changed only one time during tcc(min).
2. Refresh period is 16ms. Address are changed only one time during tcc(min).
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