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參數(shù)資料
| 型號(hào)： | KSC5386 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage Color Display Horizontal Deflection Output |
| 中文描述： | 7 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 764K |
| 代理商： | KSC5386 |
2000 Fairchild Semiconductor International
Rev. B. February 2000
K
TO-3PF
1
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
I
CES
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Saturation Voltage
V
F
Damper Diode Turn On Voltage
t
F
Fall Time
Thermal Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
R
θ
jc
Thermal Resistance, Junction to Case
Parameter
Value
1500
800
6
7
16
50
150
~ 150
Units
V
V
V
A
A
W
°
C
°
C
Test Condition
V
CE
= 1400V, R
BE
= 0
V
CB
= 800V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 1.0A
I
C
= 5A, I
B
= 1.2A
I
C
= 5A, I
B
= 1.2A
I
F
= 6A
V
CC
= 200V, I
C
= 4A, I
B1
= 0.8A,
I
B2
= -1.6A, R
L
= 50
Min.
Typ.
Max.
1
10
250
22
4.2
1.5
2
0.2
Units
mA
μ
A
mA
40
8
V
V
V
μ
s
Item
Max
2.37
Unit
°
C/W
KSC5386
High Voltage Color Display Horizontal
Deflection Output
(Damper Diode Built In)
High Collector-Base Breakdown Voltage : BV
CBO
=1500V
High Speed Switching : t
F
=0.1
μ
s (Typ)
Wide S.O.A
For C-Monitor (48KHz)
1.Base 2.Collector 3.Emitter
C
B
E
50
typ.
Equivalent Circuit
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| KSC5386TBTU | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5386YDTBTU | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5402D | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage High Speed Power Switch Application |
| KSC5402D_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Silicon Transistor, Planar Silicon Transistor |
| KSC5402DT | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage High Speed Power Switch Application |
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