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參數(shù)資料
| 型號(hào)： | KSD1047 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Audio Power Amplifier DC to DC Converter |
| 中文描述： | 8 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 52K |
| 代理商： | KSD1047 |
2000 Fairchild Semiconductor International
Rev. B, November 2000
K
NPN Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
*Collector Current (Pulse)
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE1
* DC Current Gain
h
FE2
DC Current Gain
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(on)
Base-Emitter ON Voltage
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
t
ON
Turn ON Time
t
F
Fall Time
t
STG
Storage Time
* Pulse test: PW=20
μ
s
* h
FE
Classificntion
Classification
Parameter
Value
160
140
6
8
16
80
150
- 40 ~ 150
Units
V
V
V
A
A
W
°
C
°
C
Test Condition
I
C
= 5mA, I
E
= 0
I
C
= 10mA, R
BE
=
∞
I
E
= 5mA, I
C
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 6A
I
C
= 5A, I
B
= 0.5A
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 1A
V
CB
= 10V, f = 1MHz
V
CC
= 20V
I
C
= 1A = 10I
B1
= -10I
B2
R
L
= 20
Min.
160
140
6
Typ.
Max.
Units
V
V
V
mA
mA
0.1
0.1
200
60
20
2.5
1.5
V
V
15
210
0.26
0.68
6.88
MHz
pF
μ
s
μ
s
μ
s
O
Y
h
FE1
60 ~ 120
100 ~ 200
KSD1047
Audio Power Amplifier
DC to DC Converter
High Current Capability
High Power Dissipation
Complement to KSB817
TO-3P
1
1.Base 2.Collector 3.Emitter
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KSD1047OTU | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSD10J | 制造商:OTAX 制造商全稱(chēng):OTAX 功能描述:DIP Switch |
| KSD10L | 制造商:OTAX 制造商全稱(chēng):OTAX 功能描述:DIP Switch |
| KSD10S | 制造商:OTAX 制造商全稱(chēng):OTAX 功能描述:DIP Switch |
| KSD12 | 制造商:OTAX Corporation 功能描述: |
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