參數(shù)資料
型號： KST3906
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： General Purpose Transistor
中文描述： 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件頁數(shù)： 1/4頁
文件大?。?/td> 57K
代理商： KST3906
2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
K
P
NP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
Symbol
Parameter
Value
-40
-40
-5
-200
350
150
Units
V
V
V
mA
mW
°
C
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
Parameter
Test Condition
Min.
-40
-40
-5
Max.
Units
V
V
V
nA
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
I
C
= -10
μ
A, I
E
=0
I
C
= -1.0mA, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CE
= -30V, V
EB
= -3V
V
CE
= -1V, I
C
= -0.1mA
V
CE
= -1V, I
C
= -1mA
V
CE
= -1V, I
C
= -10mA
V
CE
= -1V, I
C
= -50mA
V
CE
= -1V, I
C
= -100mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, V
CE
= -20V
f=100MHz
V
CB
= -5V, I
E
=0, f=1.0MHz
I
C
= -100
μ
A, V
CE
= -5V
R
S
=1K
f=10Hz to 15.7KHz
V
CC
= -3V, V
BE
= -0.5V
I
C
= -10mA, I
B1
= -1mA
V
CC
= -3V, I
C
= -10mA
I
B1
=I
B2
= -1mA
-50
60
80
100
60
30
300
V
CE
(sat)
* Collector-Emitter Saturation Voltage
-0.25
-0.4
-0.85
-0.95
V
V
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
-0.65
f
T
Current Gain Bandwidth Product
250
MHz
C
ob
NF
Output Capacitance
Noise Figure
4.5
4
pF
dB
t
ON
Turn On Time
70
ns
t
OFF
Turn Off Time
300
ns
KST3906
General Purpose Transistor
2A
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
相關(guān)PDF資料
PDF描述
KST4123 General Purpose Transistor
KST4124 General Purpose Transistor
KST4125 General Purpose Transistor
KST4126 General Purpose Transistor
KST42 High Voltage Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KST3906_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Silicon Transistor
KST3906MTF 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KST3906-MTF 制造商:Samsung Semiconductor 功能描述:
KST4123 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Transistor
KST4123MTF 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*