- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373188 > KST4123 (FAIRCHILD SEMICONDUCTOR CORP) General Purpose Transistor PDF資料下載
參數(shù)資料
| 型號： | KST4123 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose Transistor |
| 中文描述： | 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 44K |
| 代理商： | KST4123 |
2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
P
C
Collector Power Dissipation
T
STG
Storage Temperature
R
TH
(j-a)
Thermal Resistance junction to Ambient
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
* Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
* DC Current Gain
*
Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Parameter
Value
40
30
5
200
350
150
357
Units
V
V
V
mA
mW
°
C
°
C/W
Test Condition
Min.
40
30
5
Max.
Units
V
V
V
nA
nA
I
C
=10
μ
A, I
E
=0
I
C
=1mA, I
E
=0
I
E
=10
μ
A, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=1V, I
C
=2mA
V
CE
=1V, I
C
=50mA
I
C
=50mA, I
B
=5mA
I
C
=50mA, I
B
=5mA
V
CE
=20V, I
C
=10mA, f=100MHz
V
BE
=0.5V, I
C
=0, f=100KHz
V
CB
=5V, I
E
=0, f=100KHz
V
CE
=5V, I
C
=100
μ
A, R
S
=1K
Noise Bandwidth=10Hz to 15.7KHz
50
50
150
50
25
V
CE
(sat)
V
BE
(sat)
f
T
C
ib
C
ob
NF
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Input Capacitance
Output Capacitance
Noise Figure
0.3
0.95
V
V
250
MHz
pF
pF
dB
8
4
6
KST4123
General Purpose Transistor
5B
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KST4124 | General Purpose Transistor |
| KST4125 | General Purpose Transistor |
| KST4126 | General Purpose Transistor |
| KST42 | High Voltage Transistor |
| KST43 | High Voltage Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KST4123MTF | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KST4124 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Transistor |
| KST4124MTF | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KST4124MTF_Q | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KST4125 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。