- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358720 > L033MU01RI (Spansion Inc.) 32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control PDF資料下載
參數(shù)資料
| 型號(hào)： | L033MU01RI |
| 廠商： | Spansion Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 32兆位（4個(gè)M × 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一部門閃存記憶體與VersatileI /輸出⑩控制 |
| 文件頁(yè)數(shù)： | 52/61頁(yè) |
| 文件大?。?/td> | 772K |
| 代理商： | L033MU01RI |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)當(dāng)前第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)
50
Am29LV033MU
September 12, 2006
D A T A S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information. Write buffer program is typical per word.
3. For 1–32 bytes programmed.
4. Effective write buffer specification is based upon a 32-byte write buffer operation.
5. Byte programming specification is based upon a single byte programming operation not utilizing the write buffer.
6. When using the program suspend/resume feature, if the suspend command is issued within t
POLL
, t
POLL
must be fully re-applied
upon resuming the programming operation. If the suspend command is issued after t
POLL
, t
POLL
is not required again prior to
reading the status bits upon resuming.
Parameter
Speed Options
JEDEC
Std.
Description
90R
101,
101R
112,
112R
120,
120R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation
(Notes 2, 3)
Typ
240
μs
Effective Write Buffer Program Operation,
Per Byte (Notes 2, 4)
Typ
7.5
μs
Accelerated Effective Write Buffer Program
Operation, Per Byte (Notes 2, 4)
Typ
6.25
μs
Single Byte Program (Notes 2, 5)
Typ
60
μs
Accelerated Single Byte Programming
Operation (Note 2, 5)
Typ
54
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
t
RH
RESET# High Time Before Write (Note 1)
Min
50
ns
t
POLL
Program Valid before Status Polling
(Note 6)
Max
4
μs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| L034 | MegaMOSTMFET Module |
| L042 | Half Controlled Single Phase Rectifier Bridge |
| L048 | Three Phase Half Controlled Rectifier Bridge, B6HK |
| L081 | Thyristor Modules Thyristor/Diode Modules |
| l104 | Phase Control Thyristors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L033MU01VI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU11RI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU11VI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU12RI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU12VI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。