- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄358720 > L033MU01RI (Spansion Inc.) 32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control PDF資料下載
參數(shù)資料
| 型號(hào)： | L033MU01RI |
| 廠(chǎng)商： | Spansion Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 32兆位（4個(gè)M × 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一部門(mén)閃存記憶體與VersatileI /輸出⑩控制 |
| 文件頁(yè)數(shù)： | 7/61頁(yè) |
| 文件大小： | 772K |
| 代理商： | L033MU01RI |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)當(dāng)前第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)
September 12, 2006
Am29LV033MU
5
D A T A S H E E T
PRODUCT SELECTOR GUIDE
Note:
1. See “AC Characteristics” for full specifications.
2. For the Am29LV033MU device, the last numeric digit in the speed option (e.g. 90R, 101, 112, 120) is used for internal purposes
only. Please use OPNs as listed when placing orders.
BLOCK DIAGRAM
Part Number
Am29LV033MU
Speed
Option
V
CC
= 3.0–3.6 V
90R
(V
IO
= 3.0–3.6 V)
101R
(V
IO
= 2.7–3.6 V)
112R
(V
IO
=1.65–3.6 V)
120R
(V
IO
=1.65–3.6 V)
V
CC
= 2.7–3.6 V
101
(V
IO
= 2.7–3.6 V)
112
(V
IO
=1.65–3.6 V)
120
(V
IO
=1.65–3.6 V)
Max. Access Time (ns)
90
100
110
120
Max. CE# Access Time (ns)
90
100
110
120
Max. Page access time (t
PACC
)
25
30
30
40
30
40
Max. OE# Access Time (ns)
25
30
30
40
30
40
Input/Output
Buffers
X-Decoder
Y-Decoder
Chip Enable
Output Enable
Logic
Erase Voltage
Generator
PGM Voltage
Generator
Timer
V
CC
Detector
State
Control
Command
Register
V
CC
V
SS
V
IO
WE#
ACC
CE#
OE#
STB
STB
DQ0
–
DQ7
Sector Switches
RY/BY#
RESET#
Data
Latch
Y-Gating
Cell Matrix
A
A21–A0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| L034 | MegaMOSTMFET Module |
| L042 | Half Controlled Single Phase Rectifier Bridge |
| L048 | Three Phase Half Controlled Rectifier Bridge, B6HK |
| L081 | Thyristor Modules Thyristor/Diode Modules |
| l104 | Phase Control Thyristors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L033MU01VI | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU11RI | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU11VI | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU12RI | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU12VI | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。