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參數(shù)資料
| 型號(hào)： | L033MU01RI |
| 廠商： | Spansion Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 32兆位（4個(gè)M × 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一部門閃存記憶體與VersatileI /輸出⑩控制 |
| 文件頁數(shù)： | 60/61頁 |
| 文件大?。?/td> | 772K |
| 代理商： | L033MU01RI |
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58
Am29LV033MU
September 12, 2006
D A T A S H E E T
Erase and Program Operations and Alternate CE#
Controlled Erase and Program Operations
Modified values of t
WHWH1
Added Note #5
Erase and Programming Performance
Added values to tables that were previously TBD
Added Note #3 and #4
Revision B (May 16, 2003)
Distinctive Characteristics
Added typical active read current
Global
Converted to Preliminary version.
Modified SecSi Sector Flash Memory Region section
to include ESN references.
CMOS Compatible
Corrected Typ and Max values for the I
CC 1, 2, and 3
.
Erase and Program Operations and Alternate CE#
Controlled Erase and Program Operations
Changed Accelerated Effective Write Buffer Program
Operation value.
Erase and Programming Performance
Input values into table that were previously TBD.
Modified notes.
Removed Word references.
Revision B+1 (February 17, 2004)
Writing Commands/Command Sequences
Removed reference to word.
Word/Byte Program Command Sequences
Removed reference to word.
Added single byte programming note.
Erase Suspend/Erase Resume Commands
Added erase operation note.
Table 10: Command Definitions
Replaced the Addr information for both Program/Erase
Suspend and Program/Erase Resume from BA to
XXX.
AC Characteristics - Erase and Program
Operations
Added t
POLL
information.
AC Characteristics Figures - Program Operation
Timings, Data# Polling Timings (During Embedded
Algorithms, and Alternate CE# Controlled Write
(Erase/Program) Operation Timings
Updated with t
POLL
information.
Trademarks
Updated.
Revision B+2 (May 20, 2004)
Global
Converted to full Datasheet version.
Cover sheet and Title page
Added notation referencing superseding documenta-
tion.
Revision B+3 (December 13, 2005)
Global
This product has been retired and is not available for
designs. For new and current designs, S29GL032A
supersedes Am29LV033M and is the factory-recom-
mended migration path. Please refer to the
S29GL032A datasheet for specifications and ordering
information. Availability of this document is retained for
reference and historical purposes only.
Revision B4 (September 12, 2006)
Erase and Program Operations table
Changed t
BUSY
to a maximum specification.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L033MU01VI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU11RI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU11VI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU12RI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU12VI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
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