參數(shù)資料
型號: LH28F320BFHE-PBTLZ2
廠商: Sharp Corporation
英文描述: 32M (x16) Flash Memory
中文描述: 32M的(x16)的快閃記憶體
文件頁數(shù): 11/36頁
文件大?。?/td> 689K
代理商: LH28F320BFHE-PBTLZ2
LHF32FD2 9
Rev. 2.44
NOTES:
1. Refer to DC Characteristics. When V
PP
V
PPLK
, memory contents can be read, but cannot be altered.
2. X can be V
IL
or V
IH
for control pins and addresses, and V
PPLK
or V
PPH1/2
for V
PP
. See DC Characteristics for V
PPLK
and V
PPH1/2
voltages.
3. RST# at GND±0.2V ensures the lowest power consumption.
4. Command writes involving block erase, full chip erase, (page buffer) program or OTP program are reliably executed
when V
PP
=V
PPH1/2
and V
CC
=2.7V-3.6V.
5. Refer to Table 6 for valid D
IN
during a write operation.
6. Never hold OE# low and WE# low at the same timing.
7. Refer to Appendix of LH28F320BF series for more information about query code.
Table 5. Bus Operation
(1, 2)
Mode
Notes
RST#
CE#
OE#
WE#
Address
V
PP
X
DQ
0-15
D
OUT
High Z
Read Array
6
V
IH
V
IH
V
IH
V
IL
V
IL
V
IL
V
IH
X
V
IL
V
IH
X
V
IH
V
IH
X
X
Output Disable
X
X
Standby
X
X
High Z
Reset
3
X
X
X
X
High Z
Read Identifier
Codes/OTP
6
V
IH
V
IL
V
IL
V
IH
See
Table 3 and
Table 4
See
Appendix
X
X
See
Table 3 and
Table 4
See
Appendix
D
IN
Read Query
6,7
V
IH
V
IL
V
IL
V
IH
X
Write
4,5,6
V
IH
V
IL
V
IH
V
IL
X
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