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參數(shù)資料
| 型號： | LH28F320BFHE-PBTLZ2 |
| 廠商： | Sharp Corporation |
| 英文描述： | 32M (x16) Flash Memory |
| 中文描述： | 32M的（x16）的快閃記憶體 |
| 文件頁數(shù)： | 30/36頁 |
| 文件大?。?/td> | 689K |
| 代理商： | LH28F320BFHE-PBTLZ2 |
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LHF32FD2 28
Rev. 2.44
1.2.7 Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program Performance
(3)
NOTES:
1. Typical values measured at V
CC
=3.0V, V
PP
=3.0V or 12V, and T
A
=+25
°
C. Assumes corresponding lock bits
are not set. Subject to change based on device characterization.
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
4. A latency time is required from writing suspend command (WE# or CE# going high) until SR.7 going "1".
5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter
than t
ERES
and its sequence is repeated, the block erase operation may not be finished.
V
CC
=2.7V-3.6V, T
A
=-40
°
C to +85
°
C
Symbol
Parameter
Notes
Page Buffer
Command is
Used or not
Used
Not Used
Used
Not Used
Used
Not Used
Used
V
PP
=V
PPH1
(In System)
V
PP
=V
PPH2
(In Manufacturing)
Unit
Min.
Typ.
(1)
Max.
(2)
Min.
Typ.
(1)
Max.
(2)
t
WPB
4K-Word Parameter Block
Program Time
2
2
2
2
2
2
0.05
0.03
0.38
0.24
11
7
0.3
0.12
2.4
1.0
200
100
0.04
0.02
0.31
0.17
9
5
0.12
0.06
1.0
0.5
185
90
s
s
s
s
t
WMB
32K-Word Main Block
Program Time
t
WHQV1
/
t
EHQV1
t
WHOV1
/
t
EHOV1
t
WHQV2
/
t
EHQV2
t
WHQV3
/
t
EHQV3
Word Program Time
μ
s
μ
s
OTP Program Time
2
Not Used
36
400
27
185
μ
s
4K-Word Parameter Block
Erase Time
2
-
0.3
4
0.2
4
s
32K-Word Main Block
Erase Time
2
-
0.6
5
0.5
5
s
Full Chip Erase Time
2
40
350
33
350
s
t
WHRH1
/
t
EHRH1
t
WHRH2
/
t
EHRH2
(Page Buffer) Program Suspend
Latency Time to Read
4
-
5
10
5
10
μ
s
Block Erase Suspend
Latency Time to Read
4
-
5
20
5
20
μ
s
t
ERES
Latency Time from Block Erase
Resume Command to Block
Erase Suspend Command
5
-
500
500
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F320BJHE-PBTL90 | 32M-BIT ( 2Mbit x16 / 4Mbit x8 )Boot Block Flash MEMORY(32M位( 2M位 x16 / 4M位 x8 )Boot Block 閃速存儲器) |
| LH28F320BJHE-PTTL90 | 32M (2M x16/4M x 8)Boot Block Flash MEMORY(32M (2M x16/4M x 8)Boot Block 閃速存儲器) |
| LH28F320S3-L11 | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| LH28F320S3-L14 | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| LH28F320S5-L12 | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F320BFHE-PBTLZA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
| LH28F320BFHE-PTTL60 | 制造商:Sharp Microelectronics 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 2M x 16bit 60ns 48-Pin TSOP 制造商:Sharp Microelectronics Corporation 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 2MX16 60NS 48TSOP - Trays |
| LH28F320BFHE-PTTL70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
| LH28F320BFHE-PTTLE7 | 制造商:Sharp Microelectronics Corporation 功能描述:32M,SMART,TOP BOOT BLOCK, 80NS - Trays |
| LH28F320BFHE-PTTLZ1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
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