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參數(shù)資料
| 型號： | LH28F640SPHT-PTL12 |
| 廠商： | Sharp Corporation |
| 英文描述： | 64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory |
| 中文描述： | 64兆比特（4Mbitx16/8Mbitx8）頁閃存 |
| 文件頁數(shù)： | 11/45頁 |
| 文件大?。?/td> | 1041K |
| 代理商： | LH28F640SPHT-PTL12 |
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LHF64P01 9
Rev. 0.06
NOTES:
1. Refer to DC Characteristics. When V
PEN
≤
V
PENLK
, memory contents can be read, but cannot be altered.
2. X can be V
IL
or V
IH
for control pins and addresses, and V
PENLK
or V
PENH
for V
PEN
.
Refer to DC Characteristics for V
PENLK
and V
PENH
voltages.
3. Refer to Table 2 to determine whether the device is selected or de-selected depending on the state of CE
0
, CE
1
and CE
2
.
4. DQ refers to DQ
15
-DQ
0
in word mode (BYTE#=V
IH
:
×
16 bit) and DQ
7
-DQ
0
in byte mode (BYTE#=V
IL
:
×
8 bit).
5. RP# at GND±0.2V ensures the lowest power consumption.
6. Command writes involving block erase, (page buffer) program, block lock configuration or OTP program are reliably
executed when V
PEN
=V
PENH
and V
CC
=2.7V-3.6V.
7. Refer to Table 5 for valid D
IN
during a write operation.
8. Never hold OE# low and WE# low at the same timing.
9. Refer to Appendix of LH28F640SP series for more information about query code.
10. STS is V
OL
when the WSM (Write State Machine) is executing internal block erase, (page buffer) program or OTP
program algorithms. It is High Z during when the WSM is not busy, in block erase suspend mode (with program and page
buffer program inactive), (page buffer) program suspend mode, or reset mode.
Table 4. Bus Operation
(1, 2)
Mode
Notes
RP#
CE
0,1,2
(3)
OE#
WE#
Address
V
PEN
DQ
(4)
STS
(10)
Read Array
8
V
IH
V
IH
V
IH
V
IL
Enabled
V
IL
V
IH
V
IH
V
IH
X
X
D
OUT
X
Output Disable
Enabled
X
X
High Z
X
Standby
Disabled
X
X
X
X
High Z
X
Reset
5
X
X
X
X
X
High Z
High Z
Read Identifier
Codes/OTP
Read Query
8
V
IH
Enabled
V
IL
V
IH
Refer to
Table 3
See
Appendix
X
Refer to
Table 3
See
Appendix
D
IN
X
8,9
V
IH
Enabled
V
IL
V
IH
X
X
Write
6,7,8
V
IH
Enabled
V
IH
V
IL
X
X
X
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| LH28F640SPHT-PTLZ8 | 功能描述:閃存 64M (x8/x16) 3V Dual Supply RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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| LH28F800BGB-BL12 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
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