參數(shù)資料
型號： LH28F640SPHT-PTL12
廠商： Sharp Corporation
英文描述： 64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory
中文描述： 64兆比特（4Mbitx16/8Mbitx8）頁閃存
文件頁數(shù)： 21/45頁
文件大?。?/td> 1041K
代理商： LH28F640SPHT-PTL12
LHF64P01 19
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values are the reference values at V
CC
=3.0V, V
CCQ
=3.0V and
T
A
=+25
°
C unless V
CC
is specified.
2. CMOS inputs are either V
CCQ
±0.2V or GND±0.2V. TTL inputs are either V
IL
or V
IH
.
3. I
CCWS
and I
CCES
are specified with the device de-selected. If read or (page buffer) program is executed while in block
erase suspend mode, the device
’
s current draw is the sum of I
CCES
and I
CCR
or I
CCW
. If read is executed while in (page
buffer) program suspend mode, the device
’
s current draw is the sum of I
CCWS
and I
CCR
.
4. Block erase, (page buffer) program, block lock configuration and OTP program operations are inhibited when
V
PEN
≤
V
PENLK
or V
CC
≤
V
LKO
. These operations are not guaranteed outside the specified voltage (V
CC
=2.7V-3.6V and
V
PEN
=2.7V-3.6V).
5. The Automatic Power Savings (APS) feature automatically places the device in power save mode after read cycle
completion. Standard address access timings (t
AVQV
) provide new data when addresses are changed.
6. Sampled, not 100% tested.
7. V
PEN
is not used for power supply pin. With V
PEN
≤
V
PENLK
, block erase, (page buffer) program, block lock configuration
and OTP program operations are inhibited.
8. Includes STS.
I
CCE
V
CC
Block Erase, Clear Block Lock
Bits Current
1, 2, 6
35
70
mA
CMOS Inputs,
V
PEN
=V
PENH
TTL Inputs,
V
PEN
=V
PENH
1, 2, 6
40
80
mA
I
CCWS
I
CCES
V
IL
V
CC
(Page Buffer) Program or
Block Erase Suspend Current
1, 3
10
mA
Device is disabled
(refer to Table 2).
Input Low Voltage
6
-0.5
0.8
V
V
IH
Input High Voltage
6
2.0
V
CCQ
+ 0.5
V
V
OL
Output Low Voltage
6, 8
0.4
V
V
CC
=V
CC
Min.,
V
CCQ
=V
CCQ
Min.,
I
OL
=2mA
V
CC
=V
CC
Min.,
V
CCQ
=V
CCQ
Min.,
I
OL
=100
μ
A
V
CC
=V
CC
Min.,
V
CCQ
=V
CCQ
Min.,
I
OH
=-1.5mA
V
CC
=V
CC
Min.,
V
CCQ
=V
CCQ
Min.,
I
OH
=-100μA
0.2
V
V
OH
Output High Voltage
6, 8
0.85
×
V
CCQ
V
V
CCQ
-0.2
V
V
PENLK
V
PEN
Lockout Voltage during Normal
Operations
V
PEN
Voltage during Block Erase,
(Page Buffer) Program, Set Block Lock
Bit, Clear Block Lock Bits or OTP
Program Operations
V
CC
Lockout Voltage
4, 6, 7
1.0
V
V
PENH
4, 7
2.7
3.0
3.6
V
V
LKO
4
2.0
V
V
CC
=2.7V-3.6V
Symbol
Parameter
Notes
Min.
Typ.
Max.
Unit
Test Conditions
Rev. 0.06
DC Characteristics (Continued)
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