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參數(shù)資料
| 型號： | LH28F800SG-L10 |
| 廠商： | Sharp Corporation |
| 英文描述： | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| 中文描述： | 8 M位（512 KB的× 16）SmartVoltage閃存 |
| 文件頁數(shù)： | 1/45頁 |
| 文件大小： | 328K |
| 代理商： | LH28F800SG-L10 |
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In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
DESCRIPTION
The LH28F800SG-L/SGH-L flash memories with
SmartVoltage technology are high-density, low-cost,
nonvolatile, read/write storage solution for a wide
range of applications. The LH28F800SG-L/SGH-L
can operate at V
CC
= 2.7 V and V
PP
= 2.7 V. Their
low voltage operation capability realizes longer
battery life and suits for cellular phone application.
Their symmetrically-blocked architecture, flexible
voltage and enhanced cycling capability provide for
highly flexible component suitable for resident flash
arrays, SIMMs and memory cards. Their enhanced
suspend capabilities provide for an ideal solution for
code + data storage applications. For secure code
storage applications, such as networking, where
code is either directly executed out of flash or
downloaded to DRAM, the LH28F800SG-L/SGH-L
offer three levels of protection : absolute protection
with V
PP
at GND, selective hardware block locking,
or flexible software block locking.These alternatives
give designers ultimate control of their code security
needs.
FEATURES
SmartVoltage technology
– 2.7 V, 3.3 V or 5 V V
CC
– 2.7 V, 3.3 V, 5 V or 12 V V
PP
High performance read access time
LH28F800SG-L70/SGH-L70
– 70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V)/
85 ns (3.3±0.3 V)/100 ns (2.7 to 3.0 V)
LH28F800SG-L10/SGH-L10
– 100 ns (5.0±0.5 V)/100 ns (3.3±0.3 V)/
120 ns (2.7 to 3.0 V)
Enhanced automated suspend options
– Word write suspend to read
– Block erase suspend to word write
– Block erase suspend to read
Enhanced data protection features
– Absolute protection with V
PP
= GND
– Flexible block locking
– Block erase/word write lockout during power
transitions
SRAM-compatible write interface
High-density symmetrically-blocked architecture
– Sixteen 32 k-word erasable blocks
Enhanced cycling capability
– 100 000 block erase cycles
– 1.6 million block erase cycles/chip
Low power management
– Deep power-down mode
– Automatic power saving mode decreases I
CC
in static mode
Automated word write and block erase
– Command user interface
– Status register
ETOX
TM
V nonvolatile flash technology
Packages
– 48-pin TSOP TypeI (TSOP048-P-1220)
Normal bend/Reverse bend
–48-ball CSP(FBGA048-P-0808)
ETOX is a trademark of Intel Corporation.
LH28F800SG-L/SGH-L (FOR TSOP, CSP)
8 M-bit (512 kB x 16) SmartVoltage
Flash Memories
LH28F800SG-L/SGH-L
(FOR TSOP, CSP)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F800SUT-70 | 8M (512K 】 16, 1M 】 8) Flash Memory |
| LH28F800BGR-BL12 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGR-BL85 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGR-TL12 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGR-TL85 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F800SG-L70 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800SGN-L10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800SGN-L100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800SGN-L70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800SGR-L10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
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