- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358799 > LH5PV16256 (Sharp Corporation) CMOS 4M (256K x 16) Pseudo-Static RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | LH5PV16256 |
| 廠商： | Sharp Corporation |
| 英文描述： | CMOS 4M (256K x 16) Pseudo-Static RAM |
| 中文描述： | 的CMOS 4分（256K × 16），偽靜態(tài)存儲(chǔ)器 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 116K |
| 代理商： | LH5PV16256 |
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
NOTE
Supply voltage
Output short circuit current
Power dissipation
Operating temperature
Storage temperature
V
T
I
O
P
D
T
OPR
T
STG
-0.5 to +4.6
50
600
0 to +70
-65 to +150
V
1
mA
mW
°
C
°
C
NOTE:
1.
The maximum applicable voltage on any pin with respect to GND.
RECOMMENDED OPERATING CONDITIONS (T
A
= 0 to +70
°
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
NOTE
Supply voltage
V
CC
GND
V
IH
V
IL
2.85
0
2.0
-0.3
3.0
0
3.15
0
V
V
V
V
1
1
Input voltage
V
CC
+ 0.3
0.8
NOTE:
1.
The supply voltage with all V
CC
pins must be on the same level. The supply voltage with all GND pins must be on the same level.
PIN CAPACITANCE (T
A
= 0 to +70
°
C, f = 1 MHz, V
CC
= 3.0 V
±
0.15 V)
PARAMETER
CONDITIONS
SYMBOL
MIN.
MAX.
UNIT
Input capacitance
A
0
- A
17
UWE, LWE
OE, RFSH
CE, CS
I/O
0
- I/O
15
C
IN1
8
pF
C
IN2
8
pF
C
IN3
C
OUT1
8
pF
pF
Input/output capacitance
10
DC ELECTRICAL CHARACTERISTICS (T
A
= 0 to +70
°
C, V
CC
= 3.0 V
±
0.15 V)
PARAMETER
SYMBOL
CONDITIONS
MIN.
MAX.
UNIT
NOTE
Operating current in normal operation
I
CC1
tRC = t
RC
(MIN.)
CE, RFSH = V
IH
(MIN.)
CE, RFSH = V
CC
- 0.2 V
CE = V
IH
(MIN.)
RFSH = V
IL
(MAX.)
CE = V
CC
- 0.2 V,
RFSH = 0.2 V
0 V
≤
V
IN
≤
6.5 V
0 V on all other pins
0 V
≤
V
OUT
≤
V
CC
+ 0.3 V
Input/output pins in High-Z
state
I
OUT
= -1 mA
40
1
30
mA
mA
mA
1, 2
1
1
Standby current
I
CC2
Self-refresh average current
I
CC3
1
mA
1
70
mA
1
Input leakage current
I
LI
-10
10
μ
A
Output leakage current
I
LO
-10
10
μ
A
Output HIGH voltage
V
OH
2.4
V
I
OUT
= -100
μ
A
I
OUT
= 1 mA
I
OUT
= 100
μ
A
V
CC
- 0.2
2.2
0.4
0.2
3.15
V
V
V
V
Output LOW voltage
V
OL
Data retention voltage
V
R
NOTES:
1.
The input/output pins are in high impedance state.
2.
I
CC1
depends on the cycle time.
LH5PV16256
CMOS 4M (256
×
16) Pseudo-Static RAM
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH5PV8512 | CMOS 4M (512K x 8) Pseudo-Static RAM |
| LH6V4256 | CMOS 1M (256K x 4) Dynamic RAM |
| LH75400 | System-on-Chip |
| LH77790B | Embedded Microcontroller(32位嵌入式微控制器) |
| LH79525 | 16/32-bit System-on-Chip with Color LCD Controller |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH5PV16256S12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Pseudo-Static RAM |
| LH5PV16256S-12LL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Pseudo-Static RAM |
| LH5PV8512 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:CMOS 4M (512K x 8) Pseudo-Static RAM |
| LH5PV8512N-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LH-5S-1 | 制造商:Shinagawa Shoko 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。