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參數資料
| 型號： | LP61L256B |
| 廠商： | AMIC Technology Corporation |
| 英文描述： | 32K X 8 Bit High SPEED LOW VCC CMOS SRAM |
| 中文描述： | 32K的× 8位高速CMOS SRAM的低虛擬通道連接 |
| 文件頁數： | 3/11頁 |
| 文件大?。?/td> | 132K |
| 代理商： | LP61L256B |
LP61L256B Series
(August, 2001, Version 1.0)
3
AMIC Technology, Inc.
Recommended DC Operating Conditions
(T
A
= 0
°
C to + 70
°
C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
3.0
3.3
3.6
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
-
VCC + 0.3
V
V
IL
Input Low Voltage
-0.3
0
0.8
V
C
L
Output Load
-
-
30
pF
TTL
Output Load
-
-
1
-
Absolute Maximum Ratings*
VCC to GND . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +4.6V
IN, IN/OUT Volt to GND . . . . . . . . . . -0.3V to VCC +0.3V
Operating Temperature, Topr . . . . . . . . . . . 0
°
C to +70
°
C
Storage Temperature, Tstg . . . . . . . . . . -55
°
C to +125
°
C
Power Dissipation, Pt . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of
this device at these or any other conditions above
those indicated in the operational sections of this
specification is not implied or intended. Exposure to
the absolute maximum rating conditions for extended
periods may affect device reliability.
DC Electrical Characteristics
(T
A
= 0
°
C to 70
°
C, VCC = 3.3V
±
10%, GND = 0V)
LP61L256B-12
Symbol
Parameter
Min.
Max.
Unit
Conditions
I
LI
Input Leakage Current
-
2
μ
A
V
IN
= GND to VCC
I
LO
Output Leakage Current
-
2
μ
A
CE = V
IH
or OE = V
IH
V
I/O
= GND to VCC
I
CC1
(1)
Dynamic Operating Current
-
100
mA
CE = V
IL
, I
I/O
= 0 mA
I
SB
Standby Power
Supply Current
-
20
mA
CE = V
IH
I
SB1
-
10
mA
CE
≥
VCC - 0.2V
V
IN
≥
VCC - 0.2V or
V
IN
≤
0.2V
V
OL
Output Low Voltage
-
0.4
V
I
OL
= 8 mA
V
OH
Output High Voltage
2.4
-
V
I
OH
= -4 mA
Notes: 1. I
CC1
is dependent on output loading, cycle rates, and Read/Write patterns.
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