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參數(shù)資料
| 型號(hào)： | LP61L256B |
| 廠商： | AMIC Technology Corporation |
| 英文描述： | 32K X 8 Bit High SPEED LOW VCC CMOS SRAM |
| 中文描述： | 32K的× 8位高速CMOS SRAM的低虛擬通道連接 |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | LP61L256B |
LP61L256B Series
(August, 2001, Version 1.0)
7
AMIC Technology, Inc.
Timing Waveforms (continued)
Write Cycle
(6)
(Write Enable Controlled)
t
WC
Address
D
IN
t
OW7
t
DH
t
DW
t
WHZ7
t
WP2
t
AS1
(4)
t
CW5
t
AW
t
WR3
D
OUT
WE
CE
Write Cycle 2
(Chip Enable Controlled)
t
WC
Address
D
IN
t
DW
t
WHZ7
t
AW
t
WR3
D
OUT
t
DH
(4)
t
WP2
t
CW5
t
AS1
CE
WE
Notes: 1. t
AS
is measured from address valid to the beginning of Write.
2. A Write occurs during the overlap (t
WP
) of a low CE and a low WE .
3. t
WR
is measured from CE or WE going high to the end of the Write cycle.
4. If the CE low transition occurs simultaneously with the WE low transition or after the WE transition, outputs
remain in a high impedance state.
5. t
CW
is measured from CE going low to the end of Write.
6. OE is continuously low (OE = V
IL
).
7. Transition is measured
±
200mV from steady state. This parameter is sampled and not 100% tested.
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