參數(shù)資料
型號(hào): LPC1311FHN33,551
廠商: NXP Semiconductors
文件頁(yè)數(shù): 46/74頁(yè)
文件大?。?/td> 0K
描述: IC MCU 32BIT 8KB FLASH 33HVQFN
產(chǎn)品培訓(xùn)模塊: LPCXpresso
特色產(chǎn)品: LPC1300 Series Cortex-M3 MCUs
標(biāo)準(zhǔn)包裝: 260
系列: LPC13xx
核心處理器: ARM? Cortex?-M3
芯體尺寸: 32-位
速度: 72MHz
連通性: I²C,Microwire,SPI,SSI,UART/USART
外圍設(shè)備: 欠壓檢測(cè)/復(fù)位,POR,WDT
輸入/輸出數(shù): 28
程序存儲(chǔ)器容量: 8KB(8K x 8)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 4K x 8
電壓 - 電源 (Vcc/Vdd): 2 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 33-VQFN 裸露焊盤(pán),33-HVQFN,33-SQFN,33-DHVQFN
包裝: 托盤(pán)
配用: 622-1005-ND - USB IN-CIRCUIT PROG ARM7 LPC2K
其它名稱: 568-4915
935289654551
LPC1311_13_42_43
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 6 June 2012
50 of 74
NXP Semiconductors
LPC1311/13/42/43
32-bit ARM Cortex-M3 microcontroller
10. Dynamic characteristics
10.1 Power-up ramp conditions
[1]
[2]
The wait time specifies the time the power supply must be at levels below 400 mV before ramping up.
10.2 Flash memory
[1]
Number of program/erase cycles.
[2]
Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash in blocks of 256 bytes.
Table 12.
Power-up characteristics
Tamb =
40 °C to +85 °C.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
tr
rise time
at t = t1: 0 < VI
≤ 400 mV
500
ms
twait
wait time
-
μs
VI
input voltage
at t = t1 on pin VDD
0
-
400
mV
Condition: 0 < VI
≤ 400 mV at start of power-up (t = t1)
Fig 25. Power-up ramp
VDD
0
400 mV
tr
twait
t = t1
002aag001
Table 13.
Flash characteristics
Tamb =
40 °C to +85 °C, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Nendu
endurance
[1] 10000
100000
-
cycles
tret
retention time
powered
10
-
years
unpowered
20
-
years
ter
erase time
sector or multiple
consecutive sectors
95
100
105
ms
tprog
programming time
[2] 0.95
1
1.05
ms
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