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參數(shù)資料
| 型號： | LRS1331 |
| 廠商： | Sharp Corporation |
| 英文描述： | Stacked Chip 16M Flash Memory and 4M SRAM |
| 中文描述： | 堆疊1,600閃存芯片和4M的SRAM |
| 文件頁數(shù)： | 10/26頁 |
| 文件大?。?/td> | 216K |
| 代理商： | LRS1331 |
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LRS1331
Stacked Chip (16M Flash & 4M SRAM)
10
Data Sheet
DC CHARACTERISTICS
T
A
= -25
°
C to + 85
°
C, V
CC
= 2.7 V to 3.6 V
NOTES:
1. Reference values at V
CC
= 3.0 V and T
A
= +25
°
C.
2. CMOS inputs are either V
CC
± 0.2 V or GND ± 0.2 V. TTL inputs
are either V
IL
or V
IH
.
3. Automatic Power Savings (APS) feature is placed automatically
power save mode that addresses not switching more than 300 ns
while read mode.
4. Includes F-RY/BY.
5. Block erases and word writes are inhibited when F-V
CCW
≤
V
CCWLK
and not guaranteed in the range between V
CCWLK
(MAX.) and
V
CCWH
(MIN.), and above V
CCWH
(MAX.).
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
1
MAX.
UNIT
NOTES
Input leakage current
I
LI
I
LO
V
IN
= V
CC
or GND
V
OUT
= V
CC
or GND
F-CE = F-RP = F-V
CC
± 0.2 V
F-WP = F-V
CC
± 0.2 V
or F-GND ± 0.2 V
-1.5
+1.5
μA
Output leakage current
-1.5
+1.5
μA
F-V
CC
Standby Current
I
CCS
2
15
μA
2
F-CE = F-RP = V
IH,
F-WP = V
IH
or V
IL
F-CE = GND ± 0.2 V
0.2
2
mA
Auto Power-Save Current
I
CCAS
2
15
μA
2, 3
Reset/Power-Down Current
I
CCD
F-RP = F-GND ± 0.2 V,
I
OUT
(F-RY/BY) = 0 mA
CMOS input, F-CE = F-GND,
f = 5 MHz, I
OUT
= 0 mA
TTL input, F-CE = F-GND,
f = 5 MHz, I
OUT
= 0 mA
F-V
CCW
= V
CCWH
2
15
μA
2
Read Current
I
CCR
15
25
mA
2
30
mA
2
Word Write or Set Lock-Bit Current
I
CCW
5
17
mA
Block Erase, Full Chip Erase or
Clear Block Lock-BIts Current
I
CCE
F-V
CCW
= V
CCWH
4
17
mA
Word Write Block Erase
Suspend Current
I
CCWS
I
CCES
F-CE = V
IH
1
6
mA
F-V
CCW
Standby or Read Current
I
CCWS
I
CCWR
F-V
PP
≤
F-V
CC
F-V
PP
> F-V
CC
F-CE = GND ± 0.2 V
±2
±15
μA
2
10
200
μA
Auto Power-Save Current
I
CCWAS
I
CCWD
I
CCWW
0.1
5
μA
2, 3
Reset/Power-Down Current
F-RP = F-GND ± 0.2 V
0.1
5
μA
2
Word Write or Set Lock-Bit Current
F-V
CCW
= V
CCWH
12
40
mA
Block Erase, Full Chip Erase or
Clear Block Lock-Bits Current
I
CCWE
F-V
CCW
= V
CCWH
8
25
mA
Word Write or Block Erase
Suspend Current
I
CCWWS
I
CCWES
F-V
CCW
= V
CCWH
10
200
μA
S-V
CC
Standby Current
I
SB
S-CE
1
, S-CE
2
≥
S-V
CC
- 0.2 V
or S-CE
2
≤
0.2 V
S-CE
1
= V
IH
or S-CE
2
= V
IL
S-CE
1
= V
IL
, S-CE
2
= V
IH
, V
IN
= V
IL
or
V
IH
, t
CYCLE
= MIN., I
I/O
= 0 mA
S-CE
1
= 0.2 V, S-CE
2
= S-V
CC
- 0.2 V,
V
IN
= S-V
CC
- 0.2 V, or 0.2 V
t
= 1 μs, I
I/O
= 0 mA
15
μA
I
SB1
3
mA
Operation Current
I
CC1
45
mA
I
CC2
8
mA
Input LOW Voltage
V
IL
-0.3
0.6
V
Input HIGH Voltage
V
IH
2.2
V
CC
+
0.2
V
Output LOW Voltage
V
OL
V
OH1
V
CCWLK
I
OL
= 0.5 mA
I
OH
= -0.5 mA
0.4
V
4
Output HIGH Voltage (CMOS)
2.2
V
4
F-V
CCW
Lockout during Normal Operations
F-V
CCW
during Block Erase, Bank Erase, Word
Write or Lock-Bit Configuration Operations
1.5
V
5
V
CCWH
2.7
3.6
V
F-V
CC
Lockout Voltage
V
LKO
2.0
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LRS1337 | 制造商:Sharp Microelectronics Corporation 功能描述:32M (2MX16) FLASH, 4M (256KX16) SRAM, 3V, CSP72 - Trays |
| LRS1338A | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Stacked Chip 8M Flash Memory and 2M SRAM |
| LRS1341 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Stacked Chip 16M Flash Memory and 2M SRAM |
| LRS1342 | 制造商:Sharp Microelectronics Corporation 功能描述:COMBO 1MX16 FLASH + 128KX16 SRAM 2.7V TO 3.6V 72FBGA - Trays |
| LRS1348 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
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