參數(shù)資料
型號(hào)： LT1336
廠商： Linear Technology Corporation
英文描述： Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator(半橋N溝道功率MOS場(chǎng)效應(yīng)管驅(qū)動(dòng)器（帶升壓穩(wěn)壓器）)
中文描述： 半橋N溝道功率MOSFET的升壓穩(wěn)壓器（半橋?馬鞍山溝道功率場(chǎng)效應(yīng)管驅(qū)動(dòng)器驅(qū)動(dòng)器（帶升壓穩(wěn)壓器））
文件頁(yè)數(shù)： 1/16頁(yè)
文件大?。?/td> 302K
代理商： LT1336
1
LT1336
Half-Bridge N-Channel
Power MOSFET Driver
with Boost Regulator
I
Floating Top Driver Switches Up to 60V
I
Internal Boost Regulator for DC Operation
I
Drives Gate of Top N-Channel MOSFET
above Supply
I
180ns Transition Times Driving 10,000pF
I
Adaptive Nonoverlapping Gate Drives Prevent
Shoot-Through
I
Top Drive Maintained at High Duty Cycles
I
TTL/CMOS Input Levels
I
Undervoltage Lockout with Hysteresis
I
Operates at Supply Voltages from 10V to 15V
I
Separate Top and Bottom Drive Pins
APPLICATIO
S
U
The LT
1336 is a cost effective half-bridge N-channel
power MOSFET driver. The floating driver can drive the
topside N-channel power MOSFETs operating off a high
voltage (HV) rail of up to 60V (absolute maximum). In
PWM operation an on-chip switching regulator maintains
charge in the bootstrap capacitor even when approaching
and operating at 100% duty cycle.
The internal logic prevents the inputs from turning on the
power MOSFETs in a half-bridge at the same time. Its
unique adaptive protection against shoot-through cur-
rents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
During low supply or start-up conditions, the undervoltage
lockout actively pulls the driver outputs low to prevent the
power MOSFETs from being partially turned on. The 0.5V
hysteresis allows reliable operation even with slowly vary-
ing supplies.
FEATURES
DESCRIPTIO
N
U
I
PWM of High Current Inductive Loads
I
Half-Bridge and Full-Bridge Motor Control
I
Synchronous Step-Down Switching Regulators
I
3-Phase Brushless Motor Drive
I
High Current Transducer Drivers
I
Class D Power Amplifiers
, LTC and LT are registered trademarks of Linear Technology Corporation.
TYPICAL APPLICATIO
N
U
+
+
+
SV
+
PV
+
UVOUT
INTOP
INBOTTOM
16
14
13
12
11
9
8
1
2
10
5
3
4
SWITCH
BOOST
TGATEDR
TGATEFB
TSOURCE
BGATEDR
BGATEFB
LT1336
I
SENSE
1N4148
200
μ
H*
HV = 40V MAX**
C
BOOST
1
μ
F
10
μ
F
25V
12V
PWM
0Hz TO 100kHz
1336 TA01
IRFZ44
IRFZ44
6
15
7
1000
μ
F
100V
SGND
PGND
SWGND
1N4148
R
SENSE
2
1/4W
**FOR HV > 40V SEE “DERIVING THE FLOATING
SUPPLY WITH THE FLYBACK TOPOLOGY” IN
APPLICATIONS INFORMATION SECTION
INTOP INBOTTOM TGATEDR
L
L
L
H
H
L
H
H
BGATEDR
L
H
L
L
L
L
H
L
相關(guān)PDF資料
PDF描述
LT1346 OCTAL BUFFER/BUS DRIVERS 20-PDIP 0 to 70
LT1351 OCTAL BUFFER/BUS DRIVERS 20-PDIP 0 to 70
LT1351CMS8 OCTAL BUFFER/BUS DRIVERS 20-SO 0 to 70
LT1351CN8 OCTAL BUFFER/BUS DRIVERS 20-SO 0 to 70
LT1351CS8 OCTAL BUFFER/BUS DRIVERS 20-SO 0 to 70
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LT1336CN 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LT1336CN#PBF 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LT1336CS 功能描述:IC MOSFET DRVR 1/2BRDG NCH16SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LT1336CS#PBF 功能描述:IC MOSFET DRVR 1/2BRDG NCH16SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁(yè)面:1381 (CN2011-ZH PDF)
LT1336CS#TR 功能描述:IC DRVR MOSF 1/2BRDG N-CH 16SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
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