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參數(shù)資料
| 型號： | LT1336 |
| 廠商： | Linear Technology Corporation |
| 英文描述： | Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator(半橋N溝道功率MOS場效應(yīng)管驅(qū)動器（帶升壓穩(wěn)壓器）) |
| 中文描述： | 半橋N溝道功率MOSFET的升壓穩(wěn)壓器（半橋?馬鞍山溝道功率場效應(yīng)管驅(qū)動器驅(qū)動器（帶升壓穩(wěn)壓器）） |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 302K |
| 代理商： | LT1336 |
11
LT1336
APPLICATIO
S I
FOR
ATIO
U
Using the components as shown in Figure 2 the flyback
regulator will run at around 800kHz. To lower the fre-
quency C
FILTER
can be increased and to increase the
frequency C
FILTER
can be decreased.
W
U
U
Power MOSFET Selection
Since the LT1336 inherently protects the top and bottom
MOSFETs from simultaneous conduction, there are no
size or matching constraints. Therefore, selection can be
made based on the operating voltage and R
DS(ON)
require-
ments. The MOSFET BV
DSS
should be at least equal to the
LT1336 absolute maximum operating voltage. For a maxi-
mum operating HV supply of 60V, the MOSFET BV
DSS
should be from 60V to 100V.
The MOSFET R
DS(ON)
is specified at T
J
= 25
°
C and is
generally chosen based on the operating efficiency re-
quired as long as the maximum MOSFET junction tem-
perature is not exceeded. The dissipation in each MOSFET
is given by:
=
( )
P
D I
R
DS
DS ON
)
+
(
)
2
1
where D is the duty cycle and
is the increase in R
DS(ON)
at the anticipated MOSFET junction temperature. From
this equation the required R
DS(ON)
can be derived:
R
P
2
1
D I
DS ON
)
=
DS
( )
+
(
)
For example, if the MOSFET loss is to be limited to 2W
when operating at 5A and a 90% duty cycle, the required
R
DS(ON)
would be 0.089
/(1 +
). (1 +
) is given for each
MOSFET in the form of a normalized R
DS(ON)
vs tempera-
ture curve, but
= 0.007/
°
C can be used as an approxima-
tion for low voltage MOSFETs. Thus, if T
A
= 85
°
C and the
available heat sinking has a thermal resistance of 20
°
C/W,
the MOSFET junction temperature will be 125
°
C and
= 0.007(125 – 25) = 0.7. This means that the required
R
DS(ON)
of the MOSFET will be 0.089
/1.7 = 0.0523
,
which can be satisfied by an IRFZ34 manufactured by
International Rectifier.
Transition losses result from the power dissipated in each
MOSFET during the time it is transitioning from off to on,
or from on to off. These losses are proportional to (f)(HV)
2
and vary from insignificant to being a limiting factor on
operating frequency in some high voltage applications.
Figure 2. Using the Flyback Regulator
The flyback regulator works as follows: when switch S is
on, the primary current ramps up as the magnetic field
builds up. The magnetic field in the core induces a voltage
on the secondary winding equal to V
+
. However, no power
is transferred to V
BOOST
because the rectifier diode D2 is
reverse biased. The energy is stored in the transformer’s
magnetic field. When the primary inductor peak current is
reached, the switch is turned off. Energy is no longer
transferred to the transformer causing the magnetic field
to collapse. The collapsing magnetic field induces a change
in voltage across the transformer’s windings. During this
transition the Switch pin’s voltage flies to 10.6V plus a
diode above V
+
, the secondary forward biases the rectifier
diode D2 and the transformer’s energy is transferred to
V
BOOST
. Meanwhile the primary inductor current goes to
zero and the voltage at I
SENSE
decays to the lower inductor
current threshold with a time constant of (R
SENSE
)(C
FILTER
),
thus completing the cycle.
SWITCH
SV
+
PV
+
R
SENSE
2
1/4W
D2
1N4148
40V
1N4148
24V
1000pF
6.2k
S
HV =
60V MAX
1336 F02
LT1336
T1*
1:1
D1
1N4148
* COILTRONICS CTX100-1P
+
SWGND
BOOST
I
SENSE
C
BOOST
1
μ
F
C
FILTER
0.1
μ
F
–
+
V
BOOST
+
TGATEDR
TGATEFB
TSOURCE
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