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參數(shù)資料
| 型號(hào)： | LT1336 |
| 廠商： | Linear Technology Corporation |
| 英文描述： | Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator(半橋N溝道功率MOS場效應(yīng)管驅(qū)動(dòng)器（帶升壓穩(wěn)壓器）) |
| 中文描述： | 半橋N溝道功率MOSFET的升壓穩(wěn)壓器（半橋?馬鞍山溝道功率場效應(yīng)管驅(qū)動(dòng)器驅(qū)動(dòng)器（帶升壓穩(wěn)壓器）） |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 302K |
| 代理商： | LT1336 |
6
LT1336
TYPICAL PERFOR
M
A
CE CHARACTERISTICS
U
PI
FU
CTIO
N
S
U
U
I
SENSE
(Pin 1):
Boost Regulator I
SENSE
Comparator Input.
An R
SENSE
placed between Pin 1 and V
+
sets the maximum
peak current. Pin 1 can be left open if the boost regulator
is not used.
SV
+
(Pin 2):
Main Signal Supply. Must be closely decoupled
to the signal ground Pin 6.
INTOP (Pin 3):
Top Driver Input. Pin 3 is disabled when Pin
4 is high. A 3k input resistor followed by a 5V internal
clamp prevents saturation of the input transistors.
INBOTTOM (Pin 4):
Bottom Driver Input. Pin 4 is disabled
when Pin 3 is high. A 3k input resistor followed by a 5V
internal clamp prevents saturation of the input transistors.
UVOUT (Pin 5):
Undervoltage Output. Open collector NPN
output which turns on when V
+
drops below the undervolt-
age threshold.
SGND (Pin 6):
Small-Signal Ground. Must be routed
separately from other grounds to the system ground.
PGND (Pin 7):
Bottom Driver Power Ground. Connects to
source of bottom N-channel MOSFET.
BGATEFB (Pin 8):
Bottom Gate Feedback. Must connect
directly to the bottom power MOSFET gate. The top
MOSFET turn-on is inhibited until Pin 8 has discharged to
below 2.5V.
BGATEDR (Pin 9):
Bottom Gate Drive. The high current
drive point for the bottom MOSFET. When a gate resistor
is used it is inserted between Pin 9 and the gate of the
MOSFET.
PV
+
(Pin 10):
Bottom Driver Supply. Must be connected
to the same supply as Pin 2.
T
SOURCE (Pin 11):
Top Driver Return. Connects to the top
MOSFET source and the low side of the bootstrap capacitor.
TGATEFB (Pin 12):
Top Gate Feedback. Must connect
directly to the top power MOSFET gate. The bottom
MOSFET turn-on is inhibited until V
TGATE FB
– V
TSOURCE
has discharged to below 2.9V.
TGATEDR (Pin 13):
Top Gate Drive. The high current drive
point for the top MOSFET. When a gate resistor is used it
is inserted between Pin 13 and the gate of the MOSFET.
BOOST (Pin 14):
Top Driver Supply. Connects to the high
side of the bootstrap capacitor.
SWGND (Pin 15):
Boost Regulator Ground. Must be routed
separately from the other grounds to the system ground.
Pin 15 can be left open if the boost regulator is not used.
SWITCH (Pin 16):
Boost Regulator Switch. Connect this
pin to the inductor/diode of the boost regulator network.
Pin 16 can be left open if the boost regulator is not used.
V
BOOST
Regulated Output
vs Temperature
12.0
I
SENSE
Voltage Threshold
vs Temperature
0.52
TEMPERATURE (
°
C)
–50
I
S
100
1336 G20
0
50
0.50
0.48
0.46
0.44
0.42
0.40
0.38
0.36
–25
25
75
125
HIGH VOLTAGE THRESHOLD
LOW VOLTAGE THRESHOLD
V
+
= 12V
V
BOOST
= 68V
V
TSOURCE
= 60V
TEMPERATURE (
°
C)
–50
V
B
100
1336 G19
0
50
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
–25
25
75
125
V
BOOST
– V
TSOURCE
V
+
= 12V
V
TSOURCE
= 40V
I
LOAD
= 10mA
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