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參數(shù)資料
| 型號： | LTC1255IN8 |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Dual 24V High-Side MOSFET Driver |
| 中文描述： | 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8 |
| 封裝： | DIP-8 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大小： | 340K |
| 代理商： | LTC1255IN8 |
6
LTC1255
OPERATIOU
Internal Voltage Regulation
The output of the TTL-to-CMOS converter drives two
regulated supplies which power the low voltage CMOS
logic and analog blocks. The regulator outputs are isolated
from each other so that the noise generated by the charge
pump logic is not coupled into the 100mV reference or the
analog comparator.
Gate Charge Pump
Gate drive for the power MOSFET is produced by an
adaptive charge pump circuit which generates a gate
voltage substantially higher than the power supply volt-
age. The charge pump capacitors are included on-chip and
therefore no external components are required to generate
the gate drive. The charge pump is designed to drive a 12V
Zener diode clamp connected across the gate and source
of the MOSFET switch.
(One Channel)
BLOCK DIAGRAW
Drain Current Sense
The LTC1255 is configured to sense the current flowing
into the drain of the power MOSFET in a high-side applica-
tion. An internal 100mV reference is compared to the drop
across a sense resistor (typically 0.002
to 0.10
) in
series with the drain lead. If the drop across this resistor
exceeds the internal 100mV threshold, the input latch is
reset and the gate is quickly discharged via a relatively
large N-channel transistor.
Controlled Gate Rise and Fall Times
When the input is switched ON and OFF, the gate is
charged by the internal charge pump and discharged in a
controlled manner. The charge and discharge rates have
been set to minimize RFI and EMI emissions in normal
operation. If a short circuit or current overload condition
is encountered, the gate is discharged very quickly (typi-
cally a few microseconds) by a large N-channel transistor.
100mV
REFERENCE
10
μ
s
DELAY
LOW STANDBY
CURRENT
REGULATOR
TTL-TO-CMOS
CONVERTER
VOLTAGE
REGULATOR
ANALOG
DIGITAL
INPUT
LATCH
R
S
ONE
SHOT
OSCILLATOR
AND CHARGE
PUMP
GATE CHARGE
AND DISCHARGE
CONTROL LOGIC
FAST/SLOW
GATE CHARGE
LOGIC
INPUT
GATE
DRAIN
SENSE
ANALOG SECTION
COMP
GND
V
S
LTC1255 BD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LTC1255IS8 | Dual 24V High-Side MOSFET Driver |
| LTC1258-2.5 | Micropower Low Dropout References(2.5V輸出,微功耗，低壓差電壓基準(zhǔn)) |
| LTC1258-4.1 | Micropower Low Dropout References(4.1V輸出,微功耗，低壓差電壓基準(zhǔn)) |
| LTC1258-5 | Micropower Low Dropout References(5V輸出,微功耗，低壓差電壓基準(zhǔn)) |
| LTC1258-3 | Micropower Low Dropout References(3V輸出,微功耗，低壓差電壓基準(zhǔn)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC1255IN8#PBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| LTC1255IS8 | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1255IS8#PBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1255IS8#TR | 功能描述:IC DRVR MOSF DUAL 24V HISD 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1255IS8#TRPBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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