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參數(shù)資料
| 型號(hào)： | LTC1255IN8 |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Dual 24V High-Side MOSFET Driver |
| 中文描述： | 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8 |
| 封裝： | DIP-8 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 340K |
| 代理商： | LTC1255IN8 |
8
LTC1255
of sensitive electrical loads. (Resistor R2, and the diode
D1, provide a direct path for the LTC1255 protection
circuitry to quickly discharge the gate in the event of an
overcurrent condition.)
The RC network, R
DELAY
and C
DELAY
, in series with the
drain sense input should be set to trip based on the
expected characteristics of the load after startup, i.e., with
this circuit, it is possible to power a large capacitive load
and still react quickly to an overcurrent condition. The
ramp rate at the output of the switch as it lifts off ground
is approximately:
dV/dt = (V
GATE
– V
TH
)/(R1
×
C1)
Therefore, the current flowing into the capacitor during
startup is approximately:
I
STARTUP
= C
LOAD
×
dV/dt
Using the values shown in Figure 3, the startup current is
less than 100mA and does not false trigger the drain sense
circuitry which is set at 2.7A with a 1ms delay.
Lamp Loads
The in-rush current created by a lamp during turn-on can
be 10 to 20 times greater than the rated operating current.
The circuit shown in Figure 4 shifts the current limit
threshold up by a factor of 11:1 (to 30A) for a short period
of time while the bulb is turned on. The current limit then
drops down to 2.7A after the in-rush current has subsided.
APPLICATIU
W
U
U
V
S
DS1
1/2 LTC1255
G1
GND
IN1
VN2222LL
9.1V
12V
+
470
μ
F
R
0.036
LTC1255 F04
12V/1A
BULB
10k
100k
1M
0.1
μ
F
MTP3055EL
Figure 4. Lamp Driver With Delayed Protection
Selecting R
DELAY
and C
DELAY
Figure 5 is a graph of normalized overcurrent shutdown
time versus normalized MOSFET current. This graph is
used to select the two delay components, R
DELAY
and
C
DELAY
, which make up a simple RC delay between the
drain sense input and the drain sense resistor.
The Y axis of the graph is normalized to one RC time
constant. The X axis is normalized to the set current.
(The set current is defined as the current required to
develop 100mV across the drain sense resistor.)
Note that the shutdown time is shorter for increasing
levels of MOSFET current. This ensures that the total
energy dissipated by the MOSFET is always within the
bounds established by the manufacturer for safe opera-
tion. (See MOSFET data sheet for further S.O.A.
information.)
NORMALIZED MOSFET CURRENT (1 = SET CURRENT)
0.1
0.01
N
0.1
1
10
1
10
100
LTC1255 F05
Figure 5. Normalized Delay Time vs MOSFET Current
Using a Speed-Up Diode
Another way to reduce the amount of time that the
power MOSFET is in a short-circuit condition is to
“bypass” the delay resistor with a small signal diode as
shown in Figure 6. The diode will engage when the drop
across the drain sense resistor exceeds about 0.7V,
providing a direct path to the sense pin and dramatically
reducing the amount of time the MOSFET is in an
overload condition. The drain sense resistor value is
selected to limit the maximum DC current to 4A.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LTC1255IS8 | Dual 24V High-Side MOSFET Driver |
| LTC1258-2.5 | Micropower Low Dropout References(2.5V輸出,微功耗，低壓差電壓基準(zhǔn)) |
| LTC1258-4.1 | Micropower Low Dropout References(4.1V輸出,微功耗，低壓差電壓基準(zhǔn)) |
| LTC1258-5 | Micropower Low Dropout References(5V輸出,微功耗，低壓差電壓基準(zhǔn)) |
| LTC1258-3 | Micropower Low Dropout References(3V輸出,微功耗，低壓差電壓基準(zhǔn)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC1255IN8#PBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| LTC1255IS8 | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1255IS8#PBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1255IS8#TR | 功能描述:IC DRVR MOSF DUAL 24V HISD 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1255IS8#TRPBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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