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參數(shù)資料
| 型號： | LTE21015R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 71K |
| 代理商： | LTE21015R |
1997 Feb 19
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE21015R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
R
BE
= 250
open base
open collector
65
40
20
16
3
450
7.5
+200
200
235
V
V
V
V
mA
W
°
C
°
C
°
C
T
mb
≤
75
°
C
up to 0.2 mm from ceramic;
t
≤
10 s
T
mb
= 75
°
C.
(
Ι)
Region of permissible DC operation.
(
ΙΙ
) Permissible extension provided R
BE
< 250
.
Fig.2 DC SOAR.
handbook, halfpage
10
1
0.16
10
2
MGL060
1
Ι
ΙΙ
10
16
VCER (V)
IC
(A)
10
2
Fig.3
Power dissipation derating as a function of
mounting-base temperature.
P
tot max
= 7.5 W
handbook, halfpage
Ptot
(W)
50
200
0
2
4
6
8
0
100
Tmb (
°
C)
MGL061
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