參數資料
型號: LTE21015R
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistor
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數: 4/12頁
文件大?。?/td> 71K
代理商: LTE21015R
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE21015R
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC15”
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in a common emitter class-A test circuit.(see Fig.4)
Notes
1.
2.
3.
I
C
and V
CE
regulated.
Load power for 1 dB compression of gain.
Linear gain.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 70
°
C
note1
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
12
0.7
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
μ
A
mA
mA
μ
A
I
CBO
collector cut-off current
V
CB
= 20 V; I
E
= 0
V
CB
= 40 V; I
E
= 0
V
CE
= 20 V; R
BE
= 270
V
EB
= 1.5 V; I
C
= 0
V
CE
= 5 V; I
C
= 250 mA
15
150
1
0.5
1.5
150
I
CER
I
EBO
h
FE
collector cut-off current
emitter cut-off current
DC current gain
MODE OF OPERATION
f
(GHz)
V
CC
(V)
(1)
I
C
(mA)
(1)
P
L1
(W)
(2)
1.5
typ. 1.8
G
po
(dB)
(3)
8.5
typ. 9.5
Z
i
; Z
L
(
)
see Figs 6
and 7
Class-A (CW)
2
16
250
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