參數(shù)資料
型號(hào): LTE21015R
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistor
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 71K
代理商: LTE21015R
1997 Feb 19
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE21015R
Fig.6 Input impedance as a function of frequency for P
L1
; associated with optimum load impedance.
V
CE
= 16 V; Z
o
= 50
; I
C
= 250 mA.
handbook, full pagewidth
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
j
MCD629
2.5
4
3.5
3
2
1.5
1
Zi
1
0.5
4.2 GHz
0.2
10
5
2
Fig.7 Optimum load impedance as a function of frequency for P
L1
; associated with input impedance.
V
CE
= 16 V; Z
o
= 50
; I
C
= 250 mA.
handbook, full pagewidth
MCD628
2.5
4
3.5
3
2
1.5
ZL
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
– j
4.2
0.5
1
0.2
10
5
2
1 GHz
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