參數(shù)資料
型號: M24256-BFMB6TG/K
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 32K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
封裝: 2 X 3 MM, ROHS COMPLIANT, UFDFPN-8
文件頁數(shù): 18/42頁
文件大?。?/td> 501K
代理商: M24256-BFMB6TG/K
M24256-BF, M24256-BR, M24256-BW, M24256-DR
DC and AC parameters
Doc ID 6757 Rev 21
Table 12.
Input parameters
Symbol
Parameter(1)
1.
Sampled only, not 100% tested.
Test condition
Min.
Max.
Unit
CIN
Input capacitance (SDA)
8
pF
CIN
Input capacitance (other pins)
6
pF
ZL
(2)
2.
E2,E1,E0: Input impedance when the memory is selected (after a Start condition).
Input impedance
(E2, E1, E0, WC)
VIN < 0.3VCC
30
k
ZH
Input impedance
(E2, E1, E0, WC)
VIN > 0.7VCC
500
k
Table 13.
DC characteristics (voltage range W)
Symbol
Parameter
Test conditions (see Table 8 and
Min.
Max.
Unit
ILI
Input leakage current
(SCL, SDA, E0, E1,
E2)
VIN = VSS or VCC
device in Standby mode
± 2
A
ILO
Output leakage
current
SDA in Hi-Z, external voltage applied
on SDA: VSS or VCC
± 2
A
ICC
Supply current (Read)
VCC = 2.5 V, fc = 400 kHz
(rise/fall time < 50 ns)
1mA
VCC = 5.5 V, fc = 400 kHz
(rise/fall time < 50 ns)
2mA
ICC0
Supply current (Write) During tW, 2.5 V < VCC < 5.5 V
5(1)
1.
Characterized value, not tested in production.
mA
ICC1
Standby supply
current
Device not selected(2),
VIN = VSS or VCC, VCC
= 2.5 V
2.
The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction).
Device grade 3
5
A
Device grade 6
2
VIN = VSS or VCC, VCC = 5.5 V
5
A
VIL
Input low voltage
(SCL, SDA, WC)
–0.45
0.3VCC
V
VIH
Input high voltage
(SCL, SDA)
0.7VCC
6.5
V
Input high voltage
(WC, E0, E1, E2)
0.7VCC VCC+0.6
VOL
Output low voltage
IOL = 2.1 mA, VCC = 2.5 V
0.4
V
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