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參數(shù)資料
| 型號： | M25P40-VMN6TP |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 19/40頁 |
| 文件大?。?/td> | 232K |
| 代理商： | M25P40-VMN6TP |
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19/40
M25P40
Read Data Bytes at Higher Speed
(FAST_READ)
The device is first selected by driving Chip Select
(S) Low. The instruction code for the Read Data
Bytes at Higher Speed (FAST_READ) instruction
is followed by a 3-byte address (A23-A0) and a
dummy byte, each bit being latched-in during the
rising edge of Serial Clock (C). Then the memory
contents, at that address, is shifted out on Serial
Data Output (Q), each bit being shifted out, at a
maximum frequency f
C
, during the falling edge of
Serial Clock (C).
The instruction sequence is shown in
Figure 13.
.
The first byte addressed can be at any location.
The address is automatically incremented to the
next higher address after each byte of data is shift-
ed out. The whole memory can, therefore, be read
with a single Read Data Bytes at Higher Speed
(FAST_READ) instruction. When the highest ad-
dress is reached, the address counter rolls over to
000000h, allowing the read sequence to be contin-
ued indefinitely.
The Read Data Bytes at Higher Speed
(FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driv-
en High at any time during data output. Any Read
Data Bytes at Higher Speed (FAST_READ) in-
struction, while an Erase, Program or Write cycle
is in progress, is rejected without having any ef-
fects on the cycle that is in progress.
Figure 13. Read Data Bytes at Higher Speed (FAST_READ)
Instruction Sequence and Data-Out
Sequence
Note: 1. Address bits A23 to A19 are Don’t Care.
C
D
AI04006
S
Q
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31
22 21
3
2
1
0
High Impedance
Instruction
24 BIT ADDRESS
0
C
D
S
Q
32 33 34
36 37 38 39 40 41 42 43 44 45 46
7
6
5
4
3
2
0
1
DATA OUT 1
Dummy Byte
MSB
7
6
5
4
3
2
1
0
DATA OUT 2
MSB
MSB
7
47
7
6
5
4
3
2
0
1
35
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| M25P40-VMP3 | 4 Mbit Uniform Sector, Serial Flash Memory |
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| M25P40-VMP3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP3T | 4 Mbit Uniform Sector, Serial Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P40-VMN6TP/X | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40-VMN6TP_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25P40-VMN6TPB | 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標準包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
| M25P40-VMN6TPB07 | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel |
| M25P40-VMN6TPB11 | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel |
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