參數(shù)資料
型號(hào)： M25P40-VMN6TP
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁(yè)數(shù)： 9/40頁(yè)
文件大?。?/td> 232K
代理商： M25P40-VMN6TP
9/40
M25P40
Protection Modes
The environments where non-volatile memory de-
vices are used can be very noisy. No SPI device
can operate correctly in the presence of excessive
noise. To help combat this, the M25P40 boasts the
following data protection mechanisms:
Power-On Reset and an internal timer (t
PUW
)
can provide protection against inadvertant
changes while the power supply is outside the
operating specification.
Program, Erase and Write Status Register
instructions are checked that they consist of a
number of clock pulses that is a multiple of
eight, before they are accepted for execution.
All instructions that modify data must be
preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch
(WEL) bit . This bit is returned to its reset state
by the following events:
–
Power-up
–
Write Disable (WRDI) instruction
completion
■
■
■
–
Write Status Register (WRSR) instruction
completion
Page Program (PP) instruction completion
Sector Erase (SE) instruction completion
Bulk Erase (BE) instruction completion
The Block Protect (BP2, BP1, BP0) bits allow
part of the memory to be configured as read-
only. This is the Software Protected Mode
(SPM).
The Write Protect (W) signal allows the Block
Protect (BP2, BP1, BP0) bits and Status
Register Write Disable (SRWD) bit to be
protected. This is the Hardware Protected
Mode (HPM).
In addition to the low power consumption
feature, the Deep Power-down mode offers
extra software protection from inadvertant
Write, Program and Erase instructions, as all
instructions are ignored except one particular
instruction (the Release from Deep Power-
down instruction).
–
–
–
■
■
■
Table 2. Protected Area Sizes
Note: 1. The device is ready to accept a Bulk Erase instruction if, and only if, all Block Protect (BP2, BP1, BP0) are 0.
Status Register
Content
Memory Content
BP2
Bit
BP1
Bit
BP0
Bit
Protected Area
Unprotected Area
0
0
0
none
All sectors
1
(eight sectors: 0 to 7)
0
0
1
Upper eighth (Sector 7)
Lower seven-eighths (seven sectors: 0 to 6)
0
1
0
Upper quarter (two sectors: 6 and 7)
Lower three-quarters (six sectors: 0 to 5)
0
1
1
Upper half (four sectors: 4 to 7)
Lower half (four sectors: 0 to 3)
1
0
0
All sectors (eight sectors: 0 to 7)
none
1
0
1
All sectors (eight sectors: 0 to 7)
none
1
1
0
All sectors (eight sectors: 0 to 7)
none
1
1
1
All sectors (eight sectors: 0 to 7)
none
相關(guān)PDF資料
PDF描述
M25P40-VMP3 4 Mbit Uniform Sector, Serial Flash Memory
M25P40-VMP3G 4 Mbit Uniform Sector, Serial Flash Memory
M25P40-VMP3P 4 Mbit Uniform Sector, Serial Flash Memory
M25P40-VMP3T 4 Mbit Uniform Sector, Serial Flash Memory
M25P40-VMP3TG 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25P40-VMN6TP/X 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface
M25P40-VMN6TP_NUD 制造商:Micron Technology Inc 功能描述:
M25P40-VMN6TPB 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8
M25P40-VMN6TPB07 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel
M25P40-VMN6TPB11 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel
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