參數(shù)資料
型號: M25P40-VMN6TP
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 30/40頁
文件大?。?/td> 232K
代理商: M25P40-VMN6TP
M25P40
30/40
Table 12. DC Characteristics (Device Grade 6)
Table 13. DC Characteristics (Device Grade 3)
Note: 1. This is preliminary data
Symbol
Parameter
Test Condition
(in addition to those in
Table 9.
)
Min.
Max.
Unit
I
LI
Input Leakage Current
± 2
μA
I
LO
Output Leakage Current
± 2
μA
I
CC1
Standby Current
S = V
CC
, V
IN
= V
SS
or
V
CC
50
μA
I
CC2
Deep Power-down Current
S = V
CC
, V
IN
= V
SS
or
V
CC
10
μA
I
CC3
Operating Current (READ)
C = 0.1V
CC
/ 0.9.V
CC
at 40MHz,
Q = open
8
mA
C = 0.1V
CC
/ 0.9.V
CC
at 20MHz,
Q = open
4
mA
I
CC4
Operating Current (PP)
S = V
CC
15
mA
I
CC5
Operating Current (WRSR)
S = V
CC
15
mA
I
CC6
Operating Current (SE)
S = V
CC
15
mA
I
CC7
Operating Current (BE)
S = V
CC
15
mA
V
IL
Input Low Voltage
–0.5
0.3V
CC
V
V
IH
Input High Voltage
0.7V
CC
V
CC
+0.4
V
V
OL
Output Low Voltage
I
OL
= 1.6mA
0.4
V
V
OH
Output High Voltage
I
OH
= –100
μ
A
V
CC
–0.2
V
Symbol
Parameter
Test Condition
(in addition to those in
Table 9.
)
Min.
1
Max.
1
Unit
I
LI
Input Leakage Current
± 2
μA
I
LO
Output Leakage Current
± 2
μA
I
CC1
Standby Current
S = V
CC
, V
IN
= V
SS
or
V
CC
100
μA
I
CC2
Deep Power-down Current
S = V
CC
, V
IN
= V
SS
or
V
CC
50
μA
I
CC3
Operating Current (READ)
C = 0.1V
CC
/ 0.9.V
CC
at 40MHz,
Q = open
8
mA
C = 0.1V
CC
/ 0.9.V
CC
at 20MHz,
Q = open
4
mA
I
CC4
Operating Current (PP)
S = V
CC
15
mA
I
CC5
Operating Current (WRSR)
S = V
CC
15
mA
I
CC6
Operating Current (SE)
S = V
CC
15
mA
I
CC7
Operating Current (BE)
S = V
CC
15
mA
V
IL
Input Low Voltage
– 0.5
0.3V
CC
V
V
IH
Input High Voltage
0.7V
CC
V
CC
+0.4
V
V
OL
Output Low Voltage
I
OL
= 1.6mA
0.4
V
V
OH
Output High Voltage
I
OH
= –100
μ
A
V
CC
–0.2
V
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